| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 297 | 2018 |
| Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics JA Babcock, SG Balster, A Pinto, C Dirnecker, P Steinmann, R Jumpertz, ... IEEE Electron Device Letters 22 (5), 230-232, 2001 | 240 | 2001 |
| Programmable neuron MOSFET on SOI JA Babcock, SG Balster, GE Howard, A Pinto, P Steinmann US Patent 6,407,425, 2002 | 91 | 2002 |
| A 5V complementary-SiGe BiCMOS technology for high-speed precision analog circuits Balster, Leitz, Steinmann, Yasuda, Corsi, Dawoodi, Dirnecker, Foglietti, ... 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE …, 2003 | 65 | 2003 |
| On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits JA Babcock, A Pinto, GE Howard, P Steinmann, S Balster US Patent 6,958,523, 2005 | 49 | 2005 |
| Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect Y Wang, SH Chae, R Dunne, Y Takahashi, K Mawatari, P Steinmann, ... 2012 IEEE 62nd Electronic Components and Technology Conference, 319-325, 2012 | 37 | 2012 |
| Modeling process for integrated circuit film resistors P Steinmann, A Chatterjee, D Weiser, R Bucksch US Patent 7,039,888, 2006 | 37 | 2006 |
| Development of a stacked WCSP package platform using TSV (Through Silicon Via) technology R Dunne, Y Takahashi, K Mawatari, M Matsuura, T Bonifield, P Steinmann, ... 2012 IEEE 62nd Electronic Components and Technology Conference, 1062-1067, 2012 | 31 | 2012 |
| Laser diode/modulator combination B Borchert, B Stegmuller, P Steinmann US Patent 6,148,017, 2000 | 27 | 2000 |
| Asymmetric quantum wells with enhanced QCSE: modulation behaviour and application for integrated laser/modulator P Steinmann, B Borchert, B Stegmuller IEEE Photonics Technology Letters 9 (2), 191-193, 1997 | 27 | 1997 |
| The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn+ pnp) SiGe HBTs on thick-film SOI M Bellini, B Jun, AK Sutton, AC Appaswamy, P Cheng, JD Cressler, ... IEEE Transactions on Nuclear Science 54 (6), 2245-2250, 2007 | 26 | 2007 |
| Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using Dielectric Stack JJ Yang, JD Chen, R Wise, P Steinmann, MB Yu, DL Kwong, MF Li, ... IEEE electron device letters 30 (5), 460-462, 2009 | 25 | 2009 |
| High performance metal-insulator-metal capacitors with Er2O3 on ALD SiO2 for RF applications TH Phung, DK Srinivasan, P Steinmann, R Wise, MB Yu, YC Yeo, ... Journal of The Electrochemical Society 158 (12), H1289, 2011 | 24 | 2011 |
| Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating EW Beach, WB Meinel, P Steinmann US Patent 7,403,094, 2008 | 24 | 2008 |
| Physical and Electrical Characterization of Metal-Insulator-Metal Capacitors With Sm2O3 and Sm2O3/SiO2 Laminated Dielectrics for Analog Circuit Applications JD Chen, JJ Yang, R Wise, P Steinmann, MB Yu, C Zhu IEEE transactions on electron devices 56 (11), 2683-2691, 2009 | 22 | 2009 |
| Method of forming an integrated circuit thin film resistor P Mahalingam, RH Nguyen, P Steinmann, EW Beach, SP Kwok US Patent 6,872,655, 2005 | 21 | 2005 |
| High voltage bipolar transistor and method of fabrication SG Balster, H Yasuda, P Steinmann, B El-Kareh US Patent 8,847,359, 2014 | 20 | 2014 |
| Improved behavior of monolithically integrated laser/modulator by modified identical active layer structure P Steinmann, B Borchert, B Stegmuller IEEE Photonics Technology Letters 9 (12), 1561-1563, 1997 | 20 | 1997 |
| Drain extended CMOS with counter-doped drain extension P Steinmann, A Chatterjee, S Pendharkar US Patent 8,592,900, 2013 | 17 | 2013 |
| Performance Improvement of MIM Capacitors by Using Plasma Treatment After Dielectric Formation JJ Yang, JD Chen, R Wise, P Steinmann, YC Yeo, C Zhu IEEE electron device letters 30 (10), 1033-1035, 2009 | 17 | 2009 |
