Dr. Sarvesh Dubey

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h-index	18	15
i10-index	35	25

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Pramod Kumar TiwariIndian Institute of Technology PatnaVerified email at iitp.ac.in
Satyabrata JitIndian Institute of Technology (Banaras Hindu University) Varanasi, IndiaVerified email at iitbhu.ac.in
Mirgender Kumar, PhDChandigarh Engineering College Jhanheri, MohaliVerified email at cgc.ac.in
Prof.(Dr.) Jagdev SinghProfessor and Head Department of Mathematics, JECRC University, JaipurVerified email at jecrcu.edu.in
Kunal SinghNational Institute Of Technology, JamshedpurVerified email at nitjsr.ac.in
Abirmoya SantraIIT MadrasVerified email at smail.iitm.ac.in
Dr. Gopi Krishna SaramekalaNational Institute of Technology CalicutVerified email at nitc.ac.in
Rajeev GuptaPro-Vice ChancellorVerified email at rtu.ac.in
Dr. Ekta GoelAssistant Professor, NIT WarangalVerified email at nitw.ac.in
HIMANSHI AWASTHIBITS Pilani, Hyderabad CampusVerified email at hyderabad.bits-pilani.ac.in
NITISH KUMARIndian Institute of Technology DelhiVerified email at iitd.ac.in
Dr. Sanjay KumarElectronics and Communication Engineering, IIIT BhagalpurVerified email at iiitbh.ac.in
Santunu SarangiSilicon Institute of TechnologyVerified email at silicon.ac.in
Dr. P S T N SrinivasAssistant Professor VIT VelloreVerified email at vignanvizag.com
Devendra KumarDepartment of Mathematics, University of Rajasthan, Jaipur-302004

Dr. Sarvesh Dubey

Assistant Professor of Physics, L.N.D. College, Motihari (B.R.Ambedkar Bihar University Muzaffarpur)

Verified email at itbhu.ac.in

Semiconductor Devices and Physics Field Effect Transistors Tunnel FETs


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A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors PK Tiwari, S Dubey, M Singh, S Jit Journal of Applied Physics 108 (7), 2010	73	2010
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical … S Dubey, PK Tiwari, S Jit Journal of Applied Physics 108 (3), 2010	71	2010
An analytical threshold voltage model for triple-material cylindrical gate-all-around (TM-CGAA) MOSFETs S Dubey, A Santra, G Saramekala, M Kumar, PK Tiwari IEEE Transactions on Nanotechnology 12 (5), 766-774, 2013	57	2013
A computational study of fractional model of atmospheric dynamics of carbon dioxide gas V P Dubey, S Dubey, D Kumar, J Singh Chaos, Solitons & Fractals 142 (C), 110375, 2021	45	2021
Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs PK Tiwari, S Dubey, K Singh, S Jit Superlattices and Microstructures 51 (5), 715-724, 2012	29	2012
Numerical investigation of fractional model of phytoplankton–toxic phytoplankton–zooplankton system with convergence analysis VP Dubey, J Singh, AM Alshehri, S Dubey, D Kumar International Journal of Biomathematics 15 (04), 2250006, 2022	28	2022
Forecasting the behavior of fractional order Bloch equations appearing in NMR flow via a hybrid computational technique VP Dubey, J Singh, AM Alshehri, S Dubey, D Kumar Chaos, Solitons & Fractals 164, 112691, 2022	27	2022
Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs N Kumar, V Purwar, H Awasthi, R Gupta, K Singh, S Dubey Microelectronics Journal 113, 105104, 2021	26	2021
Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs) PK Tiwari, VR Samoju, T Sunkara, S Dubey, S Jit Journal of Computational Electronics 15, 516-524, 2016	26	2016
An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET GK Saramekala, A Santra, S Dubey, S Jit, PK Tiwari Superlattices and Microstructures 60, 580-595, 2013	25	2013
A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs S Sarangi, S Bhushan, A Santra, S Dubey, S Jit, PK Tiwari Superlattices and Microstructures 60, 263-279, 2013	24	2013
A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile S Dubey, PK Tiwari, S Jit Journal of applied Physics 109 (5), 2011	24	2011
A Modified Computational Scheme and Convergence Analysis for Fractional Order Hepatitis E Virus Model VP Dubey, D Kumar, S Dubey Advanced Numerical Methods for Differential Equations, 279-312, 2021	22	2021
An analytical model of threshold voltage for short-channel double-material-gate (DMG) strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs M Kumar, S Dubey, PK Tiwari, S Jit Journal of computational Electronics 12, 20-28, 2013	22	2013
On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile S Dubey, PK Tiwari, S Jit Journal of Semiconductors 34 (5), 054001, 2013	21	2013
Fabrication of ZnO thin films by sol–gel spin coating and their UV and white-light emission properties M Kumar, S Dubey, V Rajendar, SH Park Journal of Electronic Materials 46, 6029-6037, 2017	20	2017
Analysis of local fractional coupled Helmholtz and coupled Burgers’ equations in fractal media VP Dubey, J Singh, AM Alshehri, S Dubey, D Kumar AIMS Math 7 (5), 8080-8111, 2022	18	2022
Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs G Rawat, S Kumar, E Goel, M Kumar, S Dubey, S Jit Journal of Semiconductors 35 (8), 084001, 2014	18	2014
Computational study of a local fractional Tricomi equation occurring in fractal transonic flow S Dubey, VP Dubey, J Singh, AM Alshehri, D Kumar Journal of Computational and Nonlinear Dynamics 17 (8), 081006, 2022	17	2022
A comparative analysis of two computational schemes for solving local fractional Laplace equations VP Dubey, J Singh, AM Alshehri, S Dubey, D Kumar Mathematical Methods in the Applied Sciences 44 (17), 13540-13559, 2021	16	2021

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