| A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies J Ajayan, D Nirmal, P Mohankumar, M Saravanan, M Jagadesh, ... Superlattices and Microstructures 143, 106549, 2020 | 174 | 2020 |
| Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ... Microelectronics Journal 114, 105141, 2021 | 85 | 2021 |
| Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan AEU-International Journal of Electronics and Communications 99, 325-330, 2019 | 78 | 2019 |
| InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ... AEU-International Journal of Electronics and Communications 94, 199-214, 2018 | 74 | 2018 |
| Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon Superlattices and Microstructures 113, 810-820, 2018 | 53 | 2018 |
| On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates A Jarndal, L Arivazhagan, D Nirmal International Journal of RF and Microwave Computer‐Aided Engineering 30 (6 …, 2020 | 46 | 2020 |
| GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review J Ajayan, D Nirmal, P Mohankumar, D Kuriyan, ASA Fletcher, ... Microelectronics Journal 92, 104604, 2019 | 45 | 2019 |
| Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ... AEU-International Journal of Electronics and Communications 108, 189-194, 2019 | 43 | 2019 |
| A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications J Ajayan, D Nirmal, R Mathew, D Kurian, P Mohankumar, L Arivazhagan, ... Materials Science in Semiconductor Processing 128, 105753, 2021 | 39 | 2021 |
| Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer AS Augustine Fletcher, D Nirmal, L Arivazhagan, J Ajayan, A Varghese International Journal of RF and Microwave Computer‐Aided Engineering 30 (2 …, 2020 | 39 | 2020 |
| An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan Silicon 13, 1591-1598, 2021 | 30 | 2021 |
| A review of blue light emitting diodes for future solid state lighting and visible light communication applications M Manikandan, D Nirmal, J Ajayan, P Mohankumar, P Prajoon, ... Superlattices and Microstructures 136, 106294, 2019 | 30 | 2019 |
| Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm KH Hamza, D Nirmal, ASA Fletcher, L Arivazhagan, J Ajayan, R Natarajan AEU-International Journal of Electronics and Communications 136, 153774, 2021 | 24 | 2021 |
| Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications D Godfrey, D Nirmal, L Arivazhagan, B Roy, YL Chen, TH Yu, WK Yeh, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 18 | 2020 |
| Investigation of impact of passivation materials on the DC/RF performances of InP-HEMTs for terahertz sensing and imaging J Ajayan, D Nirmal, P Mohankumar, L Arivazhagan Silicon 12, 1225-1230, 2020 | 17 | 2020 |
| Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs J Ajayan, D Nirmal, D Kurian, P Mohankumar, L Arivazhagan, ... Journal of Vacuum Science & Technology B 37 (6), 2019 | 17 | 2019 |
| GaN HEMT on Si substrate with diamond heat spreader for high power applications L Arivazhagan, A Jarndal, D Nirmal Journal of Computational Electronics 20, 873-882, 2021 | 15 | 2021 |
| Intensive study of field-plated AlGaN/GaN HEMT on silicon substrate for high power RF applications JSR Kumar, D Nirmal, MK Hooda, S Singh, J Ajayan, L Arivazhagan Silicon, 1-6, 2021 | 12 | 2021 |
| Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications L Arivazhagan, D Nirmal, A Jarndal, HF Huq, S Chander, ... Superlattices and Microstructures 160, 107086, 2021 | 10 | 2021 |
| Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, Y Chen, ... Microelectronics Journal 118, 105293, 2021 | 10 | 2021 |
Dr.D.NirmalAssociate Dean Engineering and Technology, Karunya UniversityVerified email at karunya.edu
