| Plasma-assisted atomic layer deposition: basics, opportunities, and challenges HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels Journal of Vacuum Science & Technology A 29 (5), 2011 | 1037 | 2011 |
| The 2017 Plasma Roadmap: Low temperature plasma science and technology I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ... Journal of Physics D: Applied Physics 50 (32), 323001, 2017 | 953 | 2017 |
| Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (4), 2006 | 948 | 2006 |
| On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3 B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels Journal of Applied physics 104 (11), 2008 | 735 | 2008 |
| Silicon surface passivation by atomic layer deposited Al2O3 B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels Journal of Applied Physics 104 (4), 2008 | 616 | 2008 |
| Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels Progress in photovoltaics: research and applications 16 (6), 461-466, 2008 | 606 | 2008 |
| Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 2007 | 528 | 2007 |
| High efficiency n-type Si solar cells on Al2O3-passivated boron emitters J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ... Applied Physics Letters 92 (25), 2008 | 486 | 2008 |
| Optical constants of graphene measured by spectroscopic ellipsometry JW Weber, VE Calado, MCM Van De Sanden Applied physics letters 97 (9), 2010 | 475 | 2010 |
| In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition E Langereis, SBS Heil, HCM Knoops, W Keuning, MCM Van de Sanden, ... Journal of Physics D: Applied Physics 42 (7), 073001, 2009 | 388 | 2009 |
| Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor JL Van Hemmen, SBS Heil, JH Klootwijk, F Roozeboom, CJ Hodson, ... Journal of The Electrochemical Society 154 (7), G165, 2007 | 359 | 2007 |
| Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma HW De Vries, MCM van de Sanden, M Creatore, WMM Kessels US Patent App. 12/304,614, 2009 | 345 | 2009 |
| Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers E Langereis, M Creatore, SBS Heil, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (8), 2006 | 344 | 2006 |
| Vacancies and voids in hydrogenated amorphous silicon AHM Smets, WMM Kessels, MCM Van de Sanden Applied physics letters 82 (10), 1547-1549, 2003 | 330 | 2003 |
| Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD G Dingemans, MCM Van de Sanden, WMM Kessels Electrochemical and Solid-state letters 13 (3), H76, 2009 | 273 | 2009 |
| Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks G Dingemans, W Beyer, MCM Van de Sanden, WMM Kessels Applied physics letters 97 (15), 2010 | 237 | 2010 |
| Stability of Al2O3 and Al2O3/a-SiNx: H stacks for surface passivation of crystalline silicon G Dingemans, P Engelhart, R Seguin, F Einsele, B Hoex, ... Journal of Applied Physics 106 (11), 2009 | 218 | 2009 |
| Plasma‐driven dissociation of CO2 for fuel synthesis W Bongers, H Bouwmeester, B Wolf, F Peeters, S Welzel, ... Plasma processes and polymers 14 (6), 1600126, 2017 | 212 | 2017 |
| Controlling the fixed charge and passivation properties of Si (100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition G Dingemans, NM Terlinden, MA Verheijen, MCM Van De Sanden, ... Journal of Applied Physics 110 (9), 2011 | 210 | 2011 |
| Conformality of plasma-assisted ALD: physical processes and modeling HCM Knoops, E Langereis, MCM Van De Sanden, WMM Kessels Journal of The Electrochemical Society 157 (12), G241, 2010 | 205 | 2010 |
