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Joseph R. Nasr
Joseph R. Nasr
ASMA
Verified email at asm.com
Title
Cited by
Cited by
Year
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das
ACS nano 11 (3), 3110-3118, 2017
2632017
Mobility Deception in Nanoscale Transistors: An Untold Contact Story
JR Nasr, DS Schulman, A Sebastian, MW Horn, S Das
Advanced Materials 31 (2), 1806020, 2019
782019
Low-Power and Ultra-Thin MoS2 Photodetectors on Glass
JR Nasr, N Simonson, A Oberoi, MW Horn, JA Robinson, S Das
ACS nano 14 (11), 15440-15449, 2020
702020
Scalable BEOL compatible 2D tungsten diselenide
A Kozhakhmetov, JR Nasr, F Zhang, K Xu, NC Briggs, R Addou, ...
2D Materials 7 (1), 015029, 2019
562019
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
A Kozhakhmetov, B Schuler, AMZ Tan, KA Cochrane, JR Nasr, ...
Advanced Materials 32 (50), 2005159, 2020
452020
The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs
DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das
IEEE Nanotechnology Magazine 11 (2), 6-17, 2017
372017
Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing
RE Banai, JC Cordell, G Lindwall, NJ Tanen, SL Shang, JR Nasr, ZK Liu, ...
Journal of Electronic Materials 45 (1), 499-508, 2016
302016
Study on the Growth Parameters and the Electrical and Optical Behaviors of 2D Tungsten Disulfide
VK Singh, R Pendurthi, JR Nasr, H Mamgain, RS Tiwari, S Das, ...
ACS Applied Materials & Interfaces 12 (14), 16576-16583, 2020
182020
Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual‐Gated Transistors via Hydrogen Silsesquioxane
JR Nasr, S Das
Advanced Electronic Materials 5 (4), 1800888, 2019
172019
Low-temperature metalorganic chemical vapor deposition of molybdenum disulfide on multicomponent glass substrates
NA Simonson, JR Nasr, S Subramanian, B Jariwala, R Zhao, S Das, ...
FlatChem 11, 32-37, 2018
162018
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors
S Rai, VK Singh, R Pendurthi, JR Nasr, S Das, A Srivastava
Journal of Applied Physics 131 (9), 094301, 2022
72022
Mask-free patterning and selective CVD-growth of 2D-TMDCs semiconductors
D Alameri, JR Nasr, D Karbach, Y Liu, R Divan, S Das, I Kuljanishvili
Semiconductor Science and Technology 34 (8), 085010, 2019
62019
Pd and Au Contacts to SnS: Thermodynamic Predictions and Annealing Study
RL Gurunathan, J Nasr, JJ Cordell, RA Banai, M Abraham, KA Cooley, ...
Journal of Electronic Materials 45 (12), 6300-6304, 2016
42016
Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device
JR Nasr, JJ Cordell, RL Gurunathan, JRS Brownson, MW Horn
Journal of Electronic Materials 46 (2), 1215-1222, 2017
12017
Fabrication, Characterization, and Benchmarking of Top-Gated Field Effect Transistors Based on Exfoliated and Low-Temperature Metal-Organic Chemical Vapor Deposition Grown MoS2 …
JR Nasr
2020
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