| InP based lasers and optical amplifiers with wire-/dot-like active regions JP Reithmaier, A Somers, S Deubert, R Schwertberger, W Kaiser, ... Journal of Physics D: Applied Physics 38 (13), 2088, 2005 | 167 | 2005 |
| Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation V Mikhelashvili, G Eisenstein Journal of Applied Physics 89 (6), 3256-3269, 2001 | 139 | 2001 |
| On the nature of quantum dash structures H Dery, E Benisty, A Epstein, R Alizon, V Mikhelashvili, G Eisenstein, ... Journal of applied physics 95 (11), 6103-6111, 2004 | 115 | 2004 |
| Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films V Mikhelashvili, G Eisenstein, F Edelman, R Brener, N Zakharov, ... Journal of applied physics 95 (2), 613-620, 2004 | 114 | 2004 |
| Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon V Mikhelashvili, G Eisenstein, F Edelmann Journal of Applied Physics 90 (10), 5447-5449, 2001 | 103 | 2001 |
| Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm A Bilenca, R Alizon, V Mikhelashhvili, D Dahan, G Eisenstein, ... IEEE Photonics Technology Letters 15 (4), 563-565, 2003 | 102 | 2003 |
| On the extraction of linear and nonlinear physical parameters in nonideal diodes V Mikhelashvili, G Eisenstein, V Garber, S Fainleib, G Bahir, D Ritter, ... Journal of Applied Physics 85 (9), 6873-6883, 1999 | 93 | 1999 |
| Electrical characteristics of metal-dielectric-metal and metal-dielectricsemiconductor structures based on electron beam evaporated Y2O3 , Ta2O5 and Al2O3 thin film V Mikhaelashvili, Y Betzer, I Prudnikov, M Orenstein, D Ritter, ... Journal of applied physics 84 (12), 6747-6752, 1998 | 91 | 1998 |
| Extraction of Schottky diode parameters with a bias dependent barrier height V Mikhelashvili, G Eisenstein, R Uzdin Solid-State Electronics 45 (1), 143-148, 2001 | 80 | 2001 |
| Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films V Mikhelashvili, G Eisenstein, F Edelmann Applied physics letters 80 (12), 2156-2158, 2002 | 79 | 2002 |
| Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser A Capua, L Rozenfeld, V Mikhelashvili, G Eisenstein, M Kuntz, ... Optics express 15 (9), 5388-5393, 2007 | 78 | 2007 |
| InAs/InP 1550nm quantum dash semiconductor optical amplifiers A Bilenca, R Alizon, V Mikhelashvili, G Eisenstein, R Schwertberger, ... Electronics Letters 38 (22), 1, 2002 | 63 | 2002 |
| Structural evolution of SnO2-TiO2 nanocrystalline films for gas sensors F Edelman, H Hahn, S Seifried, C Alof, H Hoche, A Balogh, P Werner, ... Materials Science and Engineering: B 69, 386-391, 2000 | 60 | 2000 |
| Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation V Mikhelashvili, R Brener, O Kreinin, B Meyler, J Shneider, G Eisenstein Applied physics letters 85 (24), 5950-5952, 2004 | 53 | 2004 |
| Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifier R Alizon, D Hadass, V Mikhelashvili, G Eisenstein, R Schwertberger, ... Electronics Letters 40 (12), 1, 2004 | 51 | 2004 |
| Comparison of dynamic properties of ground-and excited-state emission in p-doped InAs/GaAs quantum-dot lasers D Arsenijević, A Schliwa, H Schmeckebier, M Stubenrauch, ... Applied Physics Letters 104 (18), 2014 | 50 | 2014 |
| Gain and noise saturation of wide-band InAs-InP quantum dash optical amplifiers: model and experiments D Hadass, A Bilenca, R Alizon, H Dery, V Mikhelashvili, G Eisenstein, ... IEEE Journal of Selected Topics in Quantum Electronics 11 (5), 1015-1026, 2005 | 46 | 2005 |
| Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning R Alizon, A Bilenca, H Dery, V Mikhelashvili, G Eisenstein, ... Applied physics letters 82 (26), 4660-4662, 2003 | 42 | 2003 |
| A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers V Mikhelashvili, B Meyler, S Yoffis, J Salzman, M Garbrecht, ... Applied Physics Letters 95 (2), 023104-023104-3, 2009 | 38 | 2009 |
| Temperature dependent loss and overflow effects in quantum well lasers V Mikhaelashvili, N Tessler, R Nagar, G Eisenstein, AG Dentai, ... IEEE Photonics Technology Letters 6 (11), 1293-1296, 1994 | 38 | 1994 |
Hanan DeryProfessor of Electrical and Computer Engineering, University of RochesterVerified email at rochester.edu
