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Yee-Chia Yeo
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Year
Breaking the speed limits of phase-change memory
D Loke, TH Lee, WJ Wang, LP Shi, R Zhao, YC Yeo, TC Chong, SR Elliott
Science 336 (6088), 1566-1569, 2012
8562012
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
YC Yeo, TJ King, C Hu
Journal of applied physics 92 (12), 7266-7271, 2002
5822002
Immersion fluid for immersion lithography, and method of performing immersion lithography
YC Yeo, BJ Lin, C Hu
US Patent 7,700,267, 2010
5372010
Strained nanowire CMOS device and method of forming
CY Peng, HL Chiang, YL Yang, CC Yeh, YC Yeo, CW Liu
US Patent 9,853,101, 2017
5002017
Lithography apparatus for manufacture of integrated circuits
YC Yeo, C Hu
US Patent 7,579,135, 2009
5002009
Method and system for immersion lithography
CH Lin, YC Yeo
US Patent App. 10/748,076, 2005
4442005
5nm-gate nanowire FinFET
FL Yang, DH Lee, HY Chen, CY Chang, SD Liu, CC Huang, TX Chung, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 196-197, 2004
4432004
Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
YC Yeo, HY Chen, CC Huang, WC Lee, FL Yang, C Hu
US Patent 6,867,433, 2005
4262005
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
YC Yeo, TC Chong, MF Li
Journal of applied physics 83 (3), 1429-1436, 1998
3811998
25 nm CMOS omega FETs
FL Yang, HY Chen, FC Chen, CC Huang, CY Chang, HK Chiu, CC Lee, ...
Digest. International Electron Devices Meeting,, 255-258, 2002
3612002
Electronic band structure and effective mass parameters of Ge1-xSnx alloys
K Lu Low, Y Yang, G Han, W Fan, YC Yeo
Journal of Applied Physics 112 (10), 103715, 2012
2952012
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations
YC Yeo, TJ King, C Hu
IEEE Transactions on Electron Devices 50 (4), 1027-1035, 2003
2952003
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
CH Ko, WC Lee, YC Yeo, CC Lin, C Hu
US Patent 7,112,495, 2006
2852006
Direct tunneling leakage current and scalability of alternative gate dielectrics
YC Yeo, TJ King, C Hu
Applied Physics Letters 81 (11), 2091-2093, 2002
2632002
Semiconductor nano-rod devices
HY Chen, YC Yeo, FL Yang, C Hu
US Patent 6,855,606, 2005
2562005
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
YC Yeo, Q Lu, WC Lee, TJ King, C Hu, X Wang, X Guo, TP Ma
IEEE Electron Device Letters 21 (11), 540-542, 2000
2552000
Tunneling field-effect transistor: capacitance components and modeling
Y Yang, X Tong, LT Yang, PF Guo, L Fan, YC Yeo
IEEE Electron Device Letters 31 (7), 752-754, 2010
2432010
Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ...
2007 IEEE Symposium on VLSI Technology, 108-109, 2007
2422007
Strained-channel multiple-gate transistor
YC Yeo, FL Yang, C Hu
US Patent 6,855,990, 2005
2362005
Effects of high-/spl kappa/gate dielectric materials on metal and silicon gate workfunctions
YC Yeo, P Ranade, TJ King, C Hu
IEEE Electron Device Letters 23 (6), 342-344, 2002
2302002
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