Follow
Dong-Soo Shin
Dong-Soo Shin
Dept. of Photonics and Nanoelectronics, Hanyang University ERICA
Verified email at hanyang.ac.kr
Title
Cited by
Cited by
Year
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
HY Ryu, DS Shin, JI Shim
Applied Physics Letters 100 (13), 131109, 2012
1282012
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
DS Shin, DP Han, JY Oh, JI Shim
Applied Physics Letters 100 (15), 153506, 2012
1222012
Efficiency droop in AlGaInP and GaInN light-emitting diodes
JI Shim, DP Han, H Kim, DS Shin, GB Lin, DS Meyaard, Q Shan, J Cho, ...
Applied Physics Letters 100 (11), 111106, 2012
872012
An explanation of efficiency droop in InGaN-based light emitting diodes: saturated radiative recombination rate at randomly distributed In-rich active areas
JI Shim, HS Kim, DS Shin, HY Yoo
Journal of the Korean Physical Society 58 (3), 503-508, 2011
782011
Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization
JI Shim, DS Shin
Nanophotonics 7 (10), 1601-1615, 2018
742018
The frequency behavior of the third-order intercept point in a waveguide photodiode
H Jiang, DS Shin, GL Li, TA Vang, DC Scott, PKL Yu
IEEE Photonics Technology Letters 12 (5), 540-542, 2000
692000
Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
DP Han, DG Zheng, CH Oh, H Kim, JI Shim, DS Shin, KS Kim
Applied Physics Letters 104 (15), 151108, 2014
672014
Conduction mechanisms of leakage currents in InGaN/GaN-based light-emitting diodes
DP Han, CH Oh, DG Zheng, H Kim, JI Shim, KS Kim, DS Shin
IEEE Transactions on Electron Devices 62 (2), 587-592, 2015
562015
Measurement of internal electric field in GaN-based light-emitting diodes
SI Park, JI Lee, DH Jang, HS Kim, DS Shin, HY Ryu, JI Shim
IEEE Journal of Quantum Electronics 48 (4), 500-506, 2012
512012
Optoelectronic RF signal mixing using an electroabsorption waveguide as an integrated photodetector/mixer
DS Shin, GL Li, CK Sun, SA Pappert, KK Loi, WSC Chang, PKL Yu
IEEE Photonics Technology Letters 12 (2), 193-195, 2000
502000
Analysis of time-resolved photoluminescence of InGaN quantum wells using the carrier rate equation
H Kim, DS Shin, HY Ryu, JI Shim
Japanese Journal of Applied Physics 49 (11R), 112402, 2010
472010
On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes
GW Lee, JI Shim, DS Shin
Applied Physics Letters 109 (3), 031104, 2016
422016
Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes
DP Han, CH Oh, DG Zheng, H Kim, JI Shim, KS Kim, DS Shin
Japanese Journal of Applied Physics 54 (2S), 02BA01, 2015
422015
Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes
CH Oh, JI Shim, DS Shin
Japanese Journal of Applied Physics 58 (SC), SCCC08, 2019
402019
High-power electroabsorption modulator using intra-step-barrier quantum wells
DS Shin, PKL Yu, SA Pappert
Journal of Applied Physics 89 (2), 1515-1517, 2001
402001
Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
DP Han, H Kim, JI Shim, DS Shin, KS Kim
Applied Physics Letters 105 (19), 191114, 2014
342014
Measurement of IP3 in pin photodetectors and proposed performance requirements for RF fiber-optic links
DC Scott, TA Vang, J Elliott, D Forbes, J Lacey, K Everett, F Alvarez, ...
IEEE Photonics Technology Letters 12 (4), 422-424, 2000
342000
Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy
M Usman, H Kim, JI Shim, DS Shin
Japanese Journal of Applied Physics 53 (9), 098002, 2014
322014
Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
DP Han, JI Shim, DS Shin, KS Kim
Applied Physics Express 9 (8), 081002, 2016
312016
Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement
DP Han, JI Shim, DS Shin
Applied Physics Express 10 (5), 052101, 2017
272017
The system can't perform the operation now. Try again later.
Articles 1–20