| Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits SKS A. MOHANBABU, N. Mohankumar, D. Godwin Raj, Partha Sarkar Superlattices and Microstructures 103, 270–284, 2017 | 44 | 2017 |
| Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices CK Mohanbabu.A,, Anbuselvan, N., Mohankumar, N., Godwinraj, D., Sarkar Solid State Electronics 91 ((2014)), 44-52, 2014 | 40 | 2014 |
| Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices AM S. Baskaran, N. Anbuselvan, N. Mohankumar, D. Godwinraj, C.K. Sarkar Superlattices and Microstructures 64, 470–482, 2013 | 24 | 2013 |
| Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications MN Saravana Kumar Radhakrishnan, Baskaran Subramaniyan, Mohanbabu Anandan AEU-International Journal of Electronics and Communications 83, 462-469, 2018 | 23 | 2018 |
| Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications DGR R Saravana Kumar, A Mohanbabu, N Mohankumar International Journal of Electronics 105 (3), 446-456, 2018 | 22 | 2018 |
| Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications AV P.Murugapandiyan, A.Mohanbabu, V.RajyaLakshmi, V.N.Ramakrishnan Journal of Science: Advanced Materials and Devices, 2020 | 20 | 2020 |
| Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD) SKR BASKARAN SUBRAMANIAN, MOHANBABU ANANDAN, SAMINATHAN VEERAPPAN ... Journal of Electronic Materials 11664 (08113-x), 2020 | 18* | 2020 |
| In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications DGR R Saravana Kumar, A Mohanbabu, N Mohankumar Journal of Computational Electronics 16 (3), 732-740, 2017 | 16* | 2017 |
| Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit SKS A. Mohanbabu, N. Mohankumar, D. Godwin Raj, Partha Sarkar INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES …, 2017 | 16* | 2017 |
| Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices NM A.Mohanbabu, R.Saravana Kumar Superlattices and Microstructures 112, 604-618, 2017 | 15 | 2017 |
| Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications Mohanbabu Physica E: Low-dimensional Systems and Nanostructures 92 (2017), 23-29, 2017 | 14 | 2017 |
| The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications A Danielraj, S Deb, A Mohanbabu, RS Kumar Journal of Computational Electronics, 1-12, 2022 | 13 | 2022 |
| Investigation of quaternary barrier InAlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors (HEMTs) for high-speed and high-power applications P Murugapandiyan, A Mohanbabu, VR Lakshmi, M Wasim, KM Sundaram Journal of Electronic Materials 49, 524-529, 2020 | 11 | 2020 |
| Modeling of Sheet carrier density, DC and Transconductance of Novel InAlN/GaN-based HEMT structures PBV A.Mohanbabu, N.Mohankumar, S.Baskaran, P.Anandan, N.Anbuselvan Advanced Materials Research 1105, 99-104, 2015 | 10 | 2015 |
| LG 55 nm T-gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation BSV Revathy Angamuthu,Boopathi ChettiaGoundar Sengodan,Mohanbabu Anandan ... International Journal of RF and Microwave Computer-Aided Engineering, 2022 | 9 | 2022 |
| Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits BJ A. Mohanbabu, Yusuf U.Tarauni, JohnThiruvadigal Materials Science in Semiconductor Processing 103 (104624), 1-7, 2019 | 6* | 2019 |
| Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications MA Anbuselvan N, Mohankumar N Int J Numer Model 32 (5), 1-18, 2019 | 5* | 2019 |
| GSM Based Door Lock System AMB A. Najma, B. Mohana International Journal of Innovative Technology and Exploring Engineering …, 2019 | 4* | 2019 |
| High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study C Sivamani, P Murugapandiyan, A Mohanbabu, A Fletcher Microelectronics Journal 140, 105946, 2023 | 3 | 2023 |
| Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications A Mohanbabu, N Mohankumar 2016 International Conference on Inventive Computation Technologies (ICICT …, 2016 | 3 | 2016 |
Samar SahaProspicient DevicesVerified email at ieee.org
Samar SahaProspicient DevicesVerified email at ieee.org