Liqin Su
Title
Cited by
Cited by
Year
Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films
Y Yu, C Li, Y Liu, L Su, Y Zhang, L Cao
Scientific reports 3, 1866, 2013
7612013
Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Nonepitaxial MoS2/WS2 Heterostructures
Y Yu, S Hu, L Su, L Huang, Y Liu, Z Jin, AA Purezky, DB Geohegan, ...
Nano letters 15 (1), 486-491, 2015
2832015
Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS2 Films onto Arbitrary Substrates
A Gurarslan, Y Yu, L Su, Y Yu, F Suarez, S Yao, Y Zhu, M Ozturk, Y Zhang, ...
ACS nano 8 (11), 11522-11528, 2014
2652014
Engineering substrate interactions for high luminescence efficiency of transition‐metal dichalcogenide monolayers
Y Yu, Y Yu, C Xu, YQ Cai, L Su, Y Zhang, YW Zhang, K Gundogdu, L Cao
Advanced Functional Materials 26 (26), 4733-4739, 2016
902016
Effects of substrate type and material-substrate bonding on high-temperature behavior of monolayer WS2
L Su, Y Yu, L Cao, Y Zhang
Nano Research 8 (8), 2686-2697, 2015
842015
Dependence of coupling of quasi 2-D MoS 2 with substrates on substrate types, probed by temperature dependent Raman scattering
L Su, Y Zhang, Y Yu, L Cao
Nanoscale 6 (9), 4920-4927, 2014
762014
Thermopower study of GaN-based materials for next-generation thermoelectric devices and applications
EN Hurwitz, M Asghar, A Melton, B Kucukgok, L Su, M Orocz, M Jamil, ...
Journal of electronic materials 40 (5), 513-517, 2011
532011
Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
Y Lin, Y Zhang, Z Liu, L Su, J Zhang, T Wei, Z Chen
Applied Physics Letters 101 (25), 252103, 2012
372012
Temperature coefficients of phonon frequencies and thermal conductivity in thin black phosphorus layers
L Su, Y Zhang
Applied Physics Letters 107 (7), 071905, 2015
352015
Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially …
Y Lin, Y Zhang, Z Liu, L Su, J Zhang, T Wei, Z Chen
Journal of Applied Physics 115 (2), 023103, 2014
242014
In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of
L Su, Y Yu, L Cao, Y Zhang
Physical Review Applied 7 (3), 034009, 2017
172017
Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition
MK Indika Senevirathna, S Gamage, R Atalay, AR Acharya, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (3 …, 2012
142012
Investigation on a novel Fabry-Perot filter for high power tunable fiber laser
L Su, Y Shen
Zhongguo Jiguang(Chinese Journal of Lasers) 37 (9), 2351-2354, 2010
42010
Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene
N Yue, J Myers, L Su, W Wang, F Liu, R Tsu, Y Zhuang, Y Zhang
Journal of Semiconductors 40 (6), 062001, 2019
32019
Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures
Y Yu, S Hu, L Su, L Huang, Y Liu, Z Jin, AA Purezky, DB Geohegan, ...
arXiv preprint arXiv:1403.6181, 2014
32014
Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging
S Zhang, LQ Su, J Kon, T Gfroerer, MW Wanlass, Y Zhang
Journal of Luminescence 185, 200-204, 2017
22017
Growth of thin oxidation-resistive crystalline si nanostructures on graphene
N Yue, J Myers, L Su, W Wang, F Liu, R Tsu, Y Zhuang, Y Zhang
arXiv preprint arXiv:1804.00072, 2018
12018
High Temperature Behavior of Monolayer WS2 and Its Interaction with Substrate: Dependence on Substrate Type and Bonding
L Su, Y Yu, L Gao, Y Zhang
Nano Res 8, 2686-2697, 2015
12015
Surface-enhanced Raman scattering of monolayer transition metal dichalcogenides on Ag nanorod arrays
L Su, L Bradley, Y Yu, Y Yu, L Cao, Y Zhao, Y Zhang
Optics letters 44 (22), 5493-5496, 2019
2019
Wavelength selective Photoluminescence (PL) imaging for probing kinetic energy dependence of carrier diffusion in a GaAs epilayer
S Zhang, L Su, T Gfroerer, J Kon, M Wanlass, Y Zhang
APS 2018, S07. 013, 2018
2018
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Articles 1–20