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sharifah fatmadiana wan muhamad hatta
sharifah fatmadiana wan muhamad hatta
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Title
Cited by
Cited by
Year
Comprehensive study on RF-MEMS switches used for 5G scenario
LY Ma, N Soin, MHM Daut, SFWM Hatta
IEEE Access 7, 107506-107522, 2019
742019
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
562013
Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETs
I Fazliyatul Azwa Md Rezali, Nurul Aida Farhana Othman, Maisarah Mazhar ...
IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (3), 974-981, 2016
512016
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ...
IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017
462017
Mapping the field of microbial fuel cell: A quantitative literature review (1970–2020)
MN Naseer, AA Zaidi, H Khan, S Kumar, MT bin Owais, J Jaafar, ...
Energy Reports 7, 4126-4138, 2021
432021
The effect of gate oxide thickness and drain bias on NBTI degradation in 45nm PMOS
SFWM Hatta, N Soin, JF Zhang
2010 IEEE international conference on semiconductor electronics (ICSE2010 …, 2010
38*2010
Negative bias temperature instability lifetime prediction: Problems and solutions
Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ...
2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013
362013
NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling
R Gao, Z Ji, AB Manut, JF Zhang, J Franco, SWM Hatta, WD Zhang, ...
IEEE Transactions on Electron Devices 64 (10), 4011-4017, 2017
292017
Predictive As-grown-Generation (AG) model for BTI-induced device/circuit level variations in nanoscale technology nodes
R Gao, Z Ji, SM Hatta, JF Zhang, J Franco, B Kaczer, W Zhang, M Duan, ...
2016 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2016
292016
Influence of Oxygen on Structural and Optoelectronic Properties of CdS Thin Film Deposited by Magnetron Sputtering Technique
N Islam, M. A., Hatta, S. W. M., Misran, H., Akhtaruzzaman, M., & Amin
Chinese Journal of Physics, 2020
242020
Recent progress in the diversity of inkjet-printed flexible sensor structures in biomedical engineering applications
H Hussin, N Soin, SFWM Hatta, FAM Rezali, YA Wahab
Journal of The Electrochemical Society 168 (7), 077508, 2021
222021
Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application
S Rahman, NAF Othman, S Wan Muhamad Hatta, N Soin
ECS Journal of Solid State Science and Technology 6 (12), 805-812, 2017
192017
IoT Soil Monitoring based on LoRa Module for Oil Palm Plantation
AA Ruslan, SM Salleh, SFWM Hatta, AAB Sajak
International Journal of Advanced Computer Science and Applications(IJACSA …, 2021
162021
An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices
P Devaray, SFWM Hatta, YH Wong
Journal of Materials Science: Materials in Electronics 33 (10), 7313-7348, 2022
142022
Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the …
NAF Othman, SFWM Hatta, N Soin
Journal of Electronic Materials 47, 2337-2347, 2018
132018
Effects of the fin width variation on the performance of 16 nm FinFETs with round fin corners and tapered fin shape
SWM Hatta, N Soin, SHA Rahman, YA Wahab, H Hussin
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014 …, 2014
122014
Understanding the degradation factors, mechanism and initiatives for highly efficient perovskite solar cells
MH Miah, MB Rahman, M Nur‐E‐Alam, N Das, NB Soin, SFWM Hatta, ...
ChemNanoMat 9 (3), e202200471, 2023
112023
Optimization of 7 nm strained germanium finfet design parameters using taguchi method and pareto analysis of variance
NAF Othman, FNN Azhari, SFWM Hatta, N Soin
ECS Journal of Solid State Science and Technology 7 (4), P161, 2018
102018
The application of Taguchi method on the robust optimization of p-FinFET device parameters
NAF Othman, FNN Azhari, SFWM Hatta, N Soin
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 141-144, 2016
102016
Scaling impact on design performance metric of sub-micron CMOS devices incorporated with halo
FAM Rezali, SFWM Hatta, N Soin
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015
102015
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