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Maryam shayesteh
Maryam shayesteh
Verified email at soton.ac.uk
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Cited by
Year
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current
M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...
IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014
532014
Organo-arsenic molecular layers on silicon for high-density doping
J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ...
ACS applied materials & interfaces 7 (28), 15514-15521, 2015
492015
Defect evolution and dopant activation in laser annealed Si and Ge
F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ...
Materials Science in Semiconductor Processing 42, 188-195, 2016
472016
Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates
R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ...
IEEE transactions on electron devices 59 (9), 2308-2313, 2012
362012
Impact ionization induced dynamic floating body effect in junctionless transistors
R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, ...
Solid-state electronics 90, 28-33, 2013
342013
The curious case of thin-body Ge crystallization
R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ...
Applied Physics Letters 99 (13), 2011
342011
Atomically flat low-resistive germanide contacts formed by laser thermal anneal
M Shayesteh, K Huet, I Toqué-Tresonne, R Negru, CLM Daunt, N Kelly, ...
IEEE transactions on electron devices 60 (7), 2178-2185, 2013
292013
NiGe contacts and junction architectures for P and As doped germanium devices
M Shayesteh, CLLM Daunt, D O'Connell, V Djara, M White, B Long, ...
IEEE transactions on electron devices 58 (11), 3801-3807, 2011
282011
Molecular Layer Doping: Non-destructive doping of silicon and germanium
B Long, GA Verni, J O'Connell, J Holmes, M Shayesteh, D O'Connell, ...
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
272014
The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
R Duffy, M Shayesteh, M White, J Kearney, AM Kelleher
Applied Physics Letters 96 (23), 2010
272010
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ...
Journal of Materials Chemistry C 2 (43), 9248-9257, 2014
242014
Junctionless nanowire transistor fabricated with high mobility Ge channel
R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ...
physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014
242014
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
B Long, GA Verni, J O’Connell, M Shayesteh, A Gangnaik, YM Georgiev, ...
Materials Science in Semiconductor Processing 62, 196-200, 2017
202017
Problems of n-type doped regions in germanium, their solutions, and how to beat the ITRS roadmap
R Duffy, M Shayesteh, M White, J Kearney, AM Kelleher
ECS Transactions 35 (2), 185, 2011
202011
Germanium doping challenges
R Duffy, M Shayesteh, I Kazadojev, R Yu
2013 13th International Workshop on Junction Technology (IWJT), 16-21, 2013
182013
Germanium doping, contacts, and thin-body structures
R Duffy, M Shayesteh
ECS Transactions 45 (4), 189, 2012
122012
FinFET doping; material science, metrology, and process modeling studies for optimized device performance
R Duffy, M Shayesteh
AIP Conference Proceedings 1321 (1), 17-22, 2011
122011
Mode suppression in injection locked multi-mode and single-mode lasers for optical demultiplexing
K Shortiss, M Shayesteh, W Cotter, AH Perrott, M Dernaika, FH Peters
Photonics 6 (1), 27, 2019
112019
Modelling the effect of slave laser gain and frequency comb spacing on the selective amplification of injection locked semiconductor lasers
KJ Shortiss, M Shayesteh, FH Peters
Optical and Quantum Electronics 50, 1-9, 2018
102018
RF plasma treatment of shallow ion-implanted layers of germanium
PN Okholin, VI Glotov, AN Nazarov, VO Yuchymchuk, VP Kladko, ...
Materials Science in Semiconductor Processing 42, 204-209, 2016
62016
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