Peide Ye
Peide Ye
Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University
Verified email at purdue.edu - Homepage
Title
Cited by
Cited by
Year
Phosphorene: an unexplored 2D semiconductor with a high hole mobility
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye
ACS nano 8 (4), 4033-4041, 2014
46952014
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
ACS nano 8 (8), 8292-8299, 2014
10152014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
H Liu, Y Du, Y Deng, DY Peide
Chemical Society Reviews 44 (9), 2732-2743, 2015
10092015
Channel Length Scaling of MoS2 MOSFETs
H Liu, AT Neal, PD Ye
ACS nano 6 (10), 8563-8569, 2012
7142012
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ...
Nature nanotechnology 2 (6), 378-384, 2007
5802007
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano letters 14 (11), 6275-6280, 2014
5182014
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang
Applied Physics Letters 86 (6), 063501, 2005
4822005
Phosphorene excites materials scientists
E Samuel Reich
Nature News 506 (7486), 19, 2014
4742014
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, DY Peide, ...
Nature communications 6 (1), 1-8, 2015
4612015
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric
H Liu, DY Peide
IEEE electron device letters 33 (4), 546-548, 2012
4382012
Electrons in a periodic magnetic field induced by a regular array of micromagnets
PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ...
Physical review letters 74 (15), 3013, 1995
4261995
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling
Y Du, H Liu, Y Deng, PD Ye
ACS nano 8 (10), 10035-10042, 2014
3912014
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
Y Xuan, YQ Wu, PD Ye
IEEE Electron Device Letters 29 (4), 294-296, 2008
3902008
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ...
Applied Physics Letters 83 (1), 180-182, 2003
3762003
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ...
IEEE Electron Device Letters 24 (4), 209-211, 2003
3122003
Top-gated graphene field-effect-transistors formed by decomposition of SiC
YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ...
Applied Physics Letters 92 (9), 092102, 2008
2862008
Field-effect transistors made from solution-grown two-dimensional tellurene
Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard, ...
Nature Electronics 1 (4), 228-236, 2018
2792018
Giant microwave photoresistance of two-dimensional electron gas
PD Ye, LW Engel, DC Tsui, JA Simmons, JR Wendt, GA Vawter, JL Reno
Applied Physics Letters 79 (14), 2193-2195, 2001
2682001
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye
Applied Physics Letters 92 (1), 013101, 2008
2672008
InP-based transistor fabrication
P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza
US Patent 8,329,541, 2012
2662012
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Articles 1–20