| Reconfigurable perovskite nickelate electronics for artificial intelligence HT Zhang, TJ Park, ANMN Islam, DSJ Tran, S Manna, Q Wang, S Mondal, ... Science 375 (6580), 533-539, 2022 | 115 | 2022 |
| Carrier localization in perovskite nickelates from oxygen vacancies M Kotiuga, Z Zhang, J Li, F Rodolakis, H Zhou, R Sutarto, F He, Q Wang, ... Proceedings of the National Academy of Sciences 116 (44), 21992-21997, 2019 | 87 | 2019 |
| Perovskite neural trees HT Zhang, TJ Park, IA Zaluzhnyy, Q Wang, SN Wadekar, S Manna, ... Nature communications 11 (1), 2245, 2020 | 49 | 2020 |
| Electrochromic Properties of Perovskite NdNiO3 Thin Films for Smart Windows Y Sun, Q Wang, TJ Park, TE Gage, Z Zhang, X Wang, D Zhang, X Sun, ... ACS Applied Electronic Materials 3 (4), 1719-1731, 2021 | 23 | 2021 |
| All‐electric nonassociative learning in nickel oxide S Mondal, Z Zhang, ANMN Islam, R Andrawis, S Gamage, NA Aghamiri, ... Advanced Intelligent Systems 4 (10), 2200069, 2022 | 21 | 2022 |
| Neuromorphic learning with Mott insulator NiO Z Zhang, S Mondal, S Mandal, JM Allred, NA Aghamiri, A Fali, Z Zhang, ... Proceedings of the National Academy of Sciences 118 (39), e2017239118, 2021 | 20 | 2021 |
| Well-Hidden Grain Boundary in the Monolayer MoS2 Formed by a Two-Dimensional Core–Shell Growth Mode W Zhang, Y Lin, Q Wang, W Li, Z Wang, J Song, X Li, L Zhang, L Zhu, ... ACS nano 11 (10), 10608-10615, 2017 | 16 | 2017 |
| Selective area doping for Mott neuromorphic electronics S Deng, H Yu, TJ Park, ANMN Islam, S Manna, A Pofelski, Q Wang, Y Zhu, ... Science Advances 9 (11), eade4838, 2023 | 13 | 2023 |
| Proton distribution visualization in perovskite nickelate devices utilizing nanofocused x rays IA Zaluzhnyy, PO Sprau, R Tran, Q Wang, HT Zhang, Z Zhang, TJ Park, ... Physical Review Materials 5 (9), 095003, 2021 | 9 | 2021 |
| Efficient Probabilistic Computing with Stochastic Perovskite Nickelates TJ Park, K Selcuk, HT Zhang, S Manna, R Batra, Q Wang, H Yu, NA Aadit, ... Nano Letters 22 (21), 8654-8661, 2022 | 8 | 2022 |
| Electron Doping-Induced Metal–Insulator Transition in LaNiO3 and Memory Devices Q Wang, H Zhou, S Ramanathan ACS Applied Electronic Materials 4 (5), 2463-2472, 2022 | 7 | 2022 |
| Synthesis and electrical behavior of VO2 thin films grown on SrRuO3 electrode layers C Zhang, RS Bisht, A Nozariasbmarz, A Saha, CS Han, Q Wang, Y Yuan, ... Journal of Vacuum Science & Technology A 40 (4), 2022 | 5 | 2022 |
| Hydrogenated VO2 Bits for Probabilistic Computing S Deng, TJ Park, H Yu, A Saha, ANMN Islam, Q Wang, A Sengupta, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| SYNTHESIS AND ELECTRICAL PROPERTIES OF PEROVSKITE NICKELATES Q Wang Purdue University Graduate School, 2022 | | 2022 |
| Electronic and structural changes in SmNiO3 perovskite under doping with hydrogen I Zaluzhnyy, P Sprau, R Tran, Q Wang, HT Zhang, Z Zhang, N Hua, ... APS March Meeting Abstracts 2021, X43. 003, 2021 | | 2021 |
