Influence of light waves on the effective electron mass in quantum wells, wires, inversion layers and superlattices PK Bose, N Paitya, S Bhattacharya, D De, S Saha, KM Chatterjee, ...
Quantum Matter 1 (2), 89-126, 2012
328 2012 Influence of quantizing magnetic field on the Fowler-Nordheim field emission from non-parabolic materials N Paitya, S Bhattacharya, D De, KP Ghatak
Quantum Matter 1 (1), 63-85, 2012
186 2012 Quantization and carrier mass N Paitya, KP Ghatak
Reviews in Theoretical Science 1 (2), 165-305, 2013
97 2013 Simple Theoretical Analysis of the Fowler–Nordehim Field Emission from Quantum Confined Optoelectronic Materials KP Ghatak, PK Bose, S Bhattacharya, A Bhattacharjee, D De, S Ghosh, ...
Quantum Matter 2 (2), 83-101, 2013
21 2013 Fowler–Nordheim Field Emission from Quantum Confined Superlattices N Paitya, S Bhattacharya, D De, KP Ghatak
Advanced Science, Engineering and Medicine 4 (2), 96-115, 2012
17 2012 Numerical Simulation of Membrane Potential of Single and Dense Osteoblast Cell with Different Microelectrodes N Paitya
Journal of Bionanoscience 7 (2), 145-153, 2013
16 2013 Influence of gate and channel engineering on multigate tunnel FETs: a review R Dutta, SC Konar, N Paitya
Computational Advancement in Communication Circuits and Systems: Proceedings …, 2020
15 2020 Simple Theoretical Analysis of the Magneto Seebeck Coefficient in Quantum Dot Super Lattices of Heavily Doped Semiconductors N Paitya, KP Ghatak
Journal of Advanced Physics 1 (2), 161-182, 2012
12 2012 Quantum Matter 1, 89 (2012) PK Bose, N Paitya, S Bhattacharya, D De, S Saha, KM Chatterjee, ...
Paitya, S. Bhattacharya, D. De, and KP Ghatak, Quantum Matter 1, 63, 2012
12 2012 InAs/Si hetero-junction channel to enhance the performance of DG-TFET with graphene nanoribbon: An analytical model R Dutta, TD Subash, N Paitya
Silicon 13, 1453-1459, 2021
11 2021 TCAD performance analysis of PIN tunneling FETS under surrounded gate structure R Dutta, N Paitya
2nd International Conference on Advances in Science & Technology (ICAST), 2019
10 2019 Simple theoretical analysis of the effective electron mass in semiconductor nanowires S Bhattachrya, N Paitya, KP Ghatak
Journal of Computational and Theoretical Nanoscience 10 (9), 1999-2018, 2013
9 2013 Improved DC performance analysis of a novel asymmetric extended source tunnel FET (AES-TFET) for fast switching application R Dutta, TD Subash, N Paitya
Silicon 14 (8), 3835-3841, 2022
8 2022 Study of gate source-drain overlap/gate-channel underlap in Heteojunction (50nm Ge channel) n-Double Gate TFET for different -spacer R Dutta, M Rahaman, A Guha, N Paitya
2019 International Conference on Smart Systems and Inventive Technology …, 2019
7 2019 Electrical characteristics assessment on heterojunction tunnel FET (HTFET) by optimizing various high-κ materials: HfO 2/ZrO 2 R Dutta, N Paitya
Int J Innov Technol Explor Eng 8 (10), 393-396, 2019
7 2019 Influence of crossed electric and quantizing magnetic fields on the Einstein relation in nonlinear optical, optoelectronic and related materials: Simplified theory, relative … S Pahari, S Bhattacharya, D De, SM Adhikari, A Niyogi, A Dey, N Paitya, ...
Physica B: Condensed Matter 405 (18), 4064-4078, 2010
7 2010 Electric field and surface potential analytical modeling of novel double gate triple material PiN tunneling graphene nano ribbon FET (DG-TM-PiN-TGNFET) R Dutta, N Paitya, TD Subash
Silicon 13, 719-727, 2021
6 2021 Emerging Trends in Terahertz Solid-State Physics and Devices A Biswas, A Banerjee, A Acharyya, H Inokawa, JN Roy
NY: Springer, 2020
6 2020 The Effective Electron Mass in Quantum Wells of Nonlinear Optical, III–V, Ternary and Quaternary Materials PK Bose, S Bhattacharya, D De, N Paitya, KP Ghatak
Advanced Science, Engineering and Medicine 5 (3), 245-257, 2013
6 2013 Effective electron mass in quantum wires of III–V, ternary and quaternary materials N Paitya, KP Ghatak
Journal of Nanoscience and Nanotechnology 12 (12), 8985-8993, 2012
6 2012