| Hole traps and trivalent silicon centers in metal/oxide/silicon devices PM Lenahan, PV Dressendorfer Journal of Applied Physics 55 (10), 3495-3499, 1984 | 866 | 1984 |
| What can electron paramagnetic resonance tell us about the system? PM Lenahan, JF Conley Jr Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 431 | 1998 |
| Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study DT Krick, PM Lenahan, J Kanicki Journal of applied physics 64 (7), 3558-3563, 1988 | 205 | 1988 |
| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006 | 193 | 2006 |
| Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates YY Kim, PM Lenahan Journal of applied physics 64 (7), 3551-3557, 1988 | 190 | 1988 |
| An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface PM Lenahan, PV Dressendorfer Journal of Applied Physics 54 (3), 1457-1460, 1983 | 185 | 1983 |
| First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride WL Warren, PM Lenahan, SE Curry Physical review letters 65 (2), 207, 1990 | 184 | 1990 |
| Thermal-equilibrium defect processes in hydrogenated amorphous silicon ZE Smith, S Aljishi, D Slobodin, V Chu, S Wagner, PM Lenahan, RR Arya, ... Physical review letters 57 (19), 2450, 1986 | 184 | 1986 |
| Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface PM Lenahan, PV Dressendorfer Applied Physics Letters 41 (6), 542-544, 1982 | 169 | 1982 |
| Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures PM Lenahan, PV Dressendorfer Applied physics letters 44 (1), 96-98, 1984 | 140 | 1984 |
| Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si AY Kang, PM Lenahan, JF Conley Jr Applied Physics Letters 83 (16), 3407-3409, 2003 | 135 | 2003 |
| Atomic-scale defects involved in the negative-bias temperature instability JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007 | 134 | 2007 |
| First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride PM Lenahan, SE Curry Applied physics letters 56 (2), 157-159, 1990 | 132 | 1990 |
| Nature of the E′ deep hole trap in metal‐oxide‐semiconductor oxides HS Witham, PM Lenahan Applied physics letters 51 (13), 1007-1009, 1987 | 131 | 1987 |
| An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors CJ Cochrane, PM Lenahan, AJ Lelis Journal of Applied Physics 109 (1), 2011 | 125 | 2011 |
| Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride WL Warren, PM Lenahan Physical Review B 42 (3), 1773, 1990 | 119 | 1990 |
| Nature of the dominant deep trap in amorphous silicon nitride DT Krick, PM Lenahan, J Kanicki Physical Review B 38 (12), 8226, 1988 | 119 | 1988 |
| Density of states of interface trap centers JP Campbell, PM Lenahan Applied physics letters 80 (11), 1945-1947, 2002 | 118 | 2002 |
| A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/interface MA Jupina, PM Lenahan IEEE Transactions on Nuclear Science 36 (6), 1800-1807, 1989 | 113 | 1989 |
| Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps JF Conley, PM Lenahan, AJ Lelis, TR Oldham IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995 | 111 | 1995 |
John F. Conley, Jr.Professor of Electrical Engineering and Computer Science, Oregon State UniversityVerified email at eecs.oregonstate.edu
