| Plasma activated conformal film deposition A Lavoie, S Swaminathan, H Kang, R Chandrasekharan, T Dorsh, ... US Patent 8,728,956, 2014 | 600 | 2014 |
| Conformal doping via plasma activated atomic layer deposition and conformal film deposition S Swaminathan, M Sriram, B Van Schravendijk, P Subramonium, ... US Patent 8,956,983, 2015 | 534 | 2015 |
| Plasma activated conformal dielectric film deposition S Swaminathan, J Henri, DM Hausmann, P Subramonium, M Sriram, ... US Patent 8,637,411, 2014 | 510 | 2014 |
| Gapfill of variable aspect ratio features with a composite PEALD and PECVD method H Kang, S Swaminathan, J Qian, W Kim, D Hausmann, ... US Patent 9,257,274, 2016 | 451 | 2016 |
| Soft landing nanolaminates for advanced patterning FL Pasquale, S Swaminathan, A Lavoie, N Shamma, G Dixit US Patent 9,390,909, 2016 | 443 | 2016 |
| Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system A Lavoie, H Kang, P Kumar, S Swaminathan, J Qian, F Pasquale, ... US Patent 9,617,638, 2017 | 399 | 2017 |
| Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors R Arghavani, S Tan, BN Varadarajan, A Lavoie, A Banerji, J Qian, ... US Patent 9,997,357, 2018 | 356 | 2018 |
| Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent 11,295,980, 2022 | 326 | 2022 |
| Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures B Zope, S Swaminathan, K Shrestha, C Zhu, HTA Jussila, Q Xie US Patent App. 16/105,745, 2019 | 322 | 2019 |
| Methods for depositing films on sensitive substrates H Kang, S Swaminathan, A Lavoie, J Henri US Patent 9,786,570, 2017 | 321 | 2017 |
| Methods for filling a gap feature on a substrate surface and related semiconductor device structures K Shrestha, B Zope, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent App. 16/105,761, 2019 | 311 | 2019 |
| Plasma assisted atomic layer deposition of multi-layer films for patterning applications S Swaminathan, FL Pasquale, A Lavoie US Patent 9,892,917, 2018 | 307 | 2018 |
| Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications S Swaminathan, FL Pasquale, A Lavoie US Patent 9,570,290, 2017 | 264 | 2017 |
| Method for high modulus ALD SiO2 spacer C Baldasseroni, S Swaminathan US Patent 10,134,579, 2018 | 243 | 2018 |
| Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer EJ Shero, P Ma, BP Sharma, S Swaminathan US Patent 11,424,119, 2022 | 234 | 2022 |
| Structure including SiOC layer and method of forming same BP Sharma, S Swaminathan, YC Byun, EJ Shero US Patent 11,114,294, 2021 | 234 | 2021 |
| Systems and methods for vapor delivery in a substrate processing system J Qian, H Kang, P Kumar, C Baldasseroni, H Landis, AK Duvall, M Sabri, ... US Patent 9,970,108, 2018 | 210 | 2018 |
| Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum … EC Stevens, B Zope, S Swaminathan, C Dezelah, Q Xie, GA Verni US Patent 11,286,558, 2022 | 208 | 2022 |
| Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent 11,581,220, 2023 | 203 | 2023 |
| Channeled lift pin G Singu, D Nandwana, TR Dunn, S Swaminathan, B Zope, CL White US Patent App. 17/140,661, 2021 | 178 | 2021 |
