Tania Paskova
Cited by
Cited by
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
PP Paskov, R Schifano, B Monemar, T Paskova, S Figge, D Hommel
Journal of Applied Physics 98 (9), 2005
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ...
Physical Review B 69 (11), 115216, 2004
GaN substrates for III-nitride devices
T Paskova, DA Hanser, KR Evans
Proceedings of the IEEE 98 (7), 1324-1338, 2009
Evidence for two Mg related acceptors in GaN
BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ...
Physical review letters 102 (23), 235501, 2009
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ...
Applied Physics Letters 95 (12), 2009
GaN substrates—Progress, status, and prospects
T Paskova, KR Evans
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1041-1052, 2009
Anisotropic strain and phonon deformation potentials in GaN
V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ...
Physical Review B—Condensed Matter and Materials Physics 75 (19), 195217, 2007
Development and prospects of nitride materials and devices with nonpolar surfaces
T Paskova
physica status solidi (b) 245 (6), 1011-1025, 2008
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ...
Applied Physics Letters 97 (3), 2010
Green light emitting diodes on a-plane GaN bulk substrates
T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ...
Applied Physics Letters 92 (24), 2008
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ...
Applied Physics Letters 89 (5), 2006
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
M Slomski, N Blumenschein, PP Paskov, JF Muth, T Paskova
Journal of Applied Physics 121 (23), 2017
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
C Roder, S Einfeldt, S Figge, T Paskova, D Hommel, PP Paskov, ...
Journal of applied physics 100 (10), 2006
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ...
Journal of crystal growth 281 (1), 55-61, 2005
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ...
Applied Physics Letters 96 (5), 2010
Dissociation of H-related defect complexes in Mg-doped GaN
O Gelhausen, MR Phillips, EM Goldys, T Paskova, B Monemar, ...
Physical Review B 69 (12), 125210, 2004
Modeling of the free-electron recombination band in emission spectra of highly conducting n− GaN
B Arnaudov, T Paskova, EM Goldys, S Evtimova, B Monemar
Physical Review B 64 (4), 045213, 2001
Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
Strain-related structural and vibrational properties of thin epitaxial layers
V Darakchieva, J Birch, M Schubert, T Paskova, S Tungasmita, G Wagner, ...
Physical Review B—Condensed Matter and Materials Physics 70 (4), 045411, 2004
Nitrides with nonpolar surfaces: growth, properties, and devices
T Paskova
John Wiley & Sons, 2008
The system can't perform the operation now. Try again later.
Articles 1–20