Amit Verma
Amit Verma
Department of Electrical Engineering, Indian Institute of Technology Kanpur
Verified email at iitk.ac.in - Homepage
Title
Cited by
Cited by
Year
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, HG Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
2412014
Anisotropic thermal conductivity in single crystal β-gallium oxide
Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ...
Appl. Phys. Lett. 106, 111909, 2015
1932015
Intrinsic electron mobility limits in beta-Ga2O3
N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena
Appl. Phys. Lett. 109, 212101, 2016
1612016
Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate
A Verma, AP Kajdos, TA Cain, S Stemmer, D Jena
Physical Review Letters 112 (21), 216601, 2014
892014
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
H Paik, Z Chen, E Lochocki, A Seidner H., A Verma, N Tanen, J Park, ...
APL Materials 5, 2017
722017
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
J Verma, PK Kandaswamy, V Protasenko, A Verma, HG Xing, D Jena
Applied Physics Letters 102 (4), 041103, 2013
632013
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE Electron Device Letters 34 (7), 852-854, 2013
502013
Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3
L Zhang, A Verma, HG Xing, D Jena
Japanese Journal of Applied Physics 56, 030304, 2017
412017
Charge transport in non-polar and semi-polar III-V nitride heterostructures
A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena
Semiconductor Science and Technology 27 (2), 024018, 2012
372012
Ferroelectric transition in compressively strained SrTiO3 thin films
A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 107, 192908, 2015
322015
Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
J Encomendero, R Yan, A Verma, SM Islam, V Protasenko, S Rouvimov, ...
Applied Physics Letters 112, 2018
262018
Compact Modeling of Drain Current, Charges, and Capacitances in Long-Channel Gate-All-Around Negative Capacitance MFIS Transistor
AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices, 2018
232018
Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation
A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 105, 113512, 2014
232014
Determination of the Mott-Hubbard gap in GdTiO3
L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ...
Physical Review B 92, 085111, 2015
152015
Demonstration of GaN HyperFETs with ALD VO2
A Verma, B Song, D Meyer, B Downey, V Wheeler, H Xing, D Jena
Device Research Conference, 2016
122016
Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO2
A Verma, B Song, B Downey, VD Wheeler, DJ Meyer, HG Xing, D Jena
IEEE Transactions on Electron Devices 65 (3), 2018
102018
Vertical Ga2O3Schottky barrier diodes on single-crystal β-Ga2O3(−201) substrates
B Song, AK Verma, K Nomoto, M Zhu, D Jena, HG Xing
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
102016
GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced -Doping
P Zhao, A Verma, J Verma, HG Xing, P Fay, D Jena
IEEE Electron Device Letters 35 (6), 615-617, 2014
102014
Nitride LEDs based on quantum wells and quantum dots
J VERMA, A VERMA, V PROTASENKO
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologiesá…, 2014
7*2014
Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors
A Verma, K Nomoto, W Hwang, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 108, 183509, 2016
52016
The system can't perform the operation now. Try again later.
Articles 1–20