Shriram Ramanathan
Shriram Ramanathan
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Cited by
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Oxide electronics utilizing ultrafast metal-insulator transitions
Z Yang, C Ko, S Ramanathan
Annual Review of Materials Research 41, 337-367, 2011
Ultra-thin perfect absorber employing a tunable phase change material
MA Kats, D Sharma, J Lin, P Genevet, R Blanchard, Z Yang, ...
Applied Physics Letters 101 (22), 2012
A correlated nickelate synaptic transistor
J Shi, SD Ha, Y Zhou, F Schoofs, S Ramanathan
Nature communications 4 (1), 2676, 2013
Strongly correlated perovskite fuel cells
Y Zhou, X Guan, H Zhou, K Ramadoss, S Adam, H Liu, S Lee, J Shi, ...
Nature 534 (7606), 231-234, 2016
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric
CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 23 (8), 473-475, 2002
Vanadium dioxide as a natural disordered metamaterial: perfect thermal emission and large broadband negative differential thermal emittance
MA Kats, R Blanchard, S Zhang, P Genevet, C Ko, S Ramanathan, ...
Physical Review X 3 (4), 041004, 2013
Adaptive oxide electronics: A review
SD Ha, S Ramanathan
Journal of applied physics 110 (7), 2011
Mott memory and neuromorphic devices
Y Zhou, S Ramanathan
Proceedings of the IEEE 103 (8), 1289-1310, 2015
Methods for bonding wafers using a metal interlayer
S Ramanathan, R Chebiam, M Kobrinsky, V Dubin, S List
US Patent App. 10/611,395, 2004
3D integrated circuits using thick metal for backside connections and offset bumps
S Ramanathan, SE Kim, PR Morrow
US Patent 7,410,884, 2008
Voltage-triggered ultrafast phase transition in vanadium dioxide switches
Y Zhou, X Chen, C Ko, Z Yang, C Mouli, S Ramanathan
IEEE Electron Device Letters 34 (2), 220-222, 2013
Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping
J Shi, Y Zhou, S Ramanathan
Nature communications 5 (1), 4860, 2014
Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2
DW Oh, C Ko, S Ramanathan, DG Cahill
Applied Physics Letters 96 (15), 2010
Scalable nanostructured membranes for solid-oxide fuel cells
M Tsuchiya, BK Lai, S Ramanathan
Nature nanotechnology 6 (5), 282-286, 2011
Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology
PR Morrow, CM Park, S Ramanathan, MJ Kobrinsky, M Harmes
IEEE electron device letters 27 (5), 335-337, 2006
Active optical metasurfaces based on defect-engineered phase-transition materials
J Rensberg, S Zhang, Y Zhou, AS McLeod, C Schwarz, M Goldflam, M Liu, ...
Nano letters 16 (2), 1050-1055, 2016
Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material
MA Kats, R Blanchard, P Genevet, Z Yang, MM Qazilbash, DN Basov, ...
Optics letters 38 (3), 368-370, 2013
Metrology system and method for stacked wafer alignment
T Eiles, S Ramanathan
US Patent App. 11/123,698, 2006
Method to fill the gap between coupled wafers
D Staines, GM Kloster, S Ramanathan
US Patent 7,087,538, 2006
Stacked device underfill and a method of fabrication
GM Kloster, MD Goodner, S Ramanathan, P Morrow
US Patent 6,946,384, 2005
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