WARREN B JACKSON
WARREN B JACKSON
Principal Scientist
Verified email at parc.com
Title
Cited by
Cited by
Year
Photothermal deflection spectroscopy and detection
WB Jackson, NM Amer, AC Boccara, D Fournier
Applied optics 20 (8), 1333-1344, 1981
16591981
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M Stutzmann, WB Jackson, CC Tsai
Physical Review B 32 (1), 23, 1985
15321985
A polymer/semiconductor write-once read-many-times memory
S Möller, C Perlov, W Jackson, C Taussig, SR Forrest
Nature 426 (6963), 166-169, 2003
8162003
Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
WB Jackson, NM Amer
Physical Review B 25 (8), 5559, 1982
7531982
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
J Kakalios, RA Street, WB Jackson
Physical review letters 59 (9), 1037, 1987
7101987
Piezoelectric photoacoustic detection: theory and experiment
W Jackson, NM Amer
Journal of Applied Physics 51 (6), 3343-3353, 1980
4531980
Sensitive photothermal deflection technique for measuring absorption in optically thin media
AC Boccara, D Fournier, W Jackson, NM Amer
Optics Letters 5 (9), 377-379, 1980
4241980
Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon
WB Jackson, SM Kelso, CC Tsai, JW Allen, SJ Oh
Physical Review B 31 (8), 5187, 1985
3741985
Hydrogen diffusion in amorphous silicon
RA Street, CC Tsai, J Kakalios, WB Jackson
Philosophical Magazine B 56 (3), 305-320, 1987
3101987
High-performance flexible zinc tin oxide field-effect transistors
WB Jackson, RL Hoffman, GS Herman
Applied physics letters 87 (19), 193503, 2005
3082005
Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
IW Wu, TY Huang, WB Jackson, AG Lewis, A Chiang
IEEE electron device letters 12 (4), 181-183, 1991
2931991
Density of gap states of silicon grain boundaries determined by optical absorption
WB Jackson, NM Johnson, DK Biegelsen
Applied physics letters 43 (2), 195-197, 1983
2691983
Electronic device with recovery layer proximate to active layer
WB Jackson, M Hack
US Patent 5,081,513, 1992
2381992
Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
WB Jackson, JM Marshall, MD Moyer
Physical Review B 39 (2), 1164, 1989
2331989
Hydrogen transport in amorphous silicon
WB Jackson, CC Tsai
Physical Review B 45 (12), 6564, 1992
1861992
Microdevice valve structures to fluid control
DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin
US Patent 5,971,355, 1999
1821999
Mechanisms of thermal equilibration in doped amorphous silicon
RA Street, M Hack, WB Jackson
Physical Review B 37 (8), 4209, 1988
1801988
Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films
NH Nickel, NM Johnson, WB Jackson
Applied physics letters 62 (25), 3285-3287, 1993
1721993
Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon
WB Jackson, J Kakalios
Physical Review B 37 (2), 1020, 1988
1721988
Connection between the Meyer-Neldel relation and multiple-trapping transport
WB Jackson
Physical Review B 38 (5), 3595, 1988
1701988
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