| Thermoelectric silicides: A review A Nozariasbmarz, A Agarwal, ZA Coutant, MJ Hall, J Liu, R Liu, ... Japanese Journal of Applied Physics 56 (5S1), 05DA04, 2017 | 158 | 2017 |
| Monolithic 4-terminal 1.2 kV/20 A 4H-SiC bi-directional field effect transistor (BiDFET) with integrated JBS diodes K Han, A Agarwal, A Kanale, BJ Baliga, S Bhattacharya, TH Cheng, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 29 | 2020 |
| Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide A Agarwal, K Han, BJ Baliga 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 28 | 2018 |
| Impact of cell topology on characteristics of 600V 4H-SiC planar MOSFETs A Agarwal, K Han, BJ Baliga IEEE Electron Device Letters 40 (5), 773-776, 2019 | 24 | 2019 |
| 600 V 4H-SiC MOSFETs fabricated in commercial foundry with reduced gate oxide thickness of 27 nm to achieve IGBT-compatible gate drive of 15 V A Agarwal, K Han, BJ Baliga IEEE Electron Device Letters 40 (11), 1792-1795, 2019 | 19 | 2019 |
| Advanced 650 V SiC power MOSFETs with 10 V gate drive compatible with Si superjunction devices A Agarwal, A Kanale, BJ Baliga IEEE Transactions on Power Electronics 36 (3), 3335-3345, 2020 | 15 | 2020 |
| Comparison of new octagonal cell topology for 1.2 kV 4H-SiC JBSFETs with linear and hexagonal topologies: Analysis and experimental results K Han, A Agarwal, BJ Baliga 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 15 | 2019 |
| Switching and short-circuit performance of 27 nm gate oxide, 650 V SiC planar-gate MOSFETs with 10 to 15 V gate drive voltage A Agarwal, A Kanale, K Han, BJ Baliga 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 13 | 2020 |
| Impact of gate oxide thickness on switching and short circuit performance of 1200 V 4H-SiC inversion-channel MOSFETs A Agarwal, A Kanale, K Han, BJ Baliga, S Bhattacharya 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 12 | 2019 |
| Comparison of 2.3-kV 4H-SiC accumulation-channel planar power MOSFETs fabricated with linear, square, hexagonal, and octagonal cell topologies A Agarwal, K Han, BJ Baliga IEEE Transactions on Electron Devices 67 (9), 3673-3678, 2020 | 11 | 2020 |
| 2.3 kV 4H-SiC accumulation-channel split-gate planar power MOSFETs with reduced gate charge A Agarwal, K Han, BJ Baliga IEEE Journal of the Electron Devices Society 8, 499-504, 2020 | 11 | 2020 |
| Monolithic reverse blocking 1.2 kV 4H-SiC power transistor: A novel, single-chip, three-terminal device for current source inverter applications A Kanale, A Agarwal, BJ Baliga, S Bhattacharya IEEE Transactions on Power Electronics 37 (9), 10112-10116, 2022 | 10 | 2022 |
| Optimized AC/DC dual active bridge converter using monolithic SiC bidirectional FET (BiDFET) for solar PV applications SS Shah, R Narwal, S Bhattacharya, A Kanale, TH Cheng, U Mehrotra, ... 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 568-575, 2021 | 9 | 2021 |
| Assessment of linear, hexagonal, and octagonal cell topologies for 650 V 4H-SiC inversion-channel planar-gate power JBSFETs fabricated with 27 nm gate oxide thickness A Agarwal, K Han, BJ Baliga IEEE Journal of the Electron Devices Society 9, 79-88, 2020 | 9 | 2020 |
| Packaging development for a 1200V SiC BiDFET switch using highly thermally conductive organic epoxy laminate U Mehrotra, TH Cheng, A Kanale, A Agarwal, K Han, BJ Baliga, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 9 | 2020 |
| Performance enhancement of 2.3 kV 4H-SiC planar-gate MOSFETs using reduced gate oxide thickness A Agarwal, BJ Baliga IEEE Transactions on Electron Devices 68 (10), 5029-5033, 2021 | 8 | 2021 |
| Switching characteristics of a 1.2 kV, 50 mΩ SiC monolithic bidirectional field effect transistor (BiDFET) with integrated JBS diodes A Kanale, TH Cheng, SS Shah, K Han, A Agarwal, BJ Baliga, D Hopkins, ... 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267-1274, 2021 | 8 | 2021 |
| Impact of gate oxide thickness on electrical characteristics of 1200 V 4H-SiC planar-gate power MOSFETs A Agarwal, K Han, BJ Baliga 2019 Device Research Conference (DRC), 237-238, 2019 | 7 | 2019 |
| 2.3-kV, 5-A 4H-SiC Ti and Ni JBS rectifiers manufactured in commercial foundry: Impact of implant lateral straggle A Agarwal, K Han, BJ Baliga 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020 | 6 | 2020 |
| The BiDFET device and its impact on converters BJ Baliga, D Hopkins, S Bhattacharya, A Agarwal, TH Cheng, R Narwal, ... IEEE Power Electronics Magazine 10 (1), 20-27, 2023 | 5 | 2023 |
