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Abhishek Upadhyay
Abhishek Upadhyay
X-FAB Dresden GmbH & Co. KG
Verified email at xfab.com
Title
Cited by
Cited by
Year
A review on emerging negative capacitance field effect transistor for low power electronics
SB Rahi, S Tayal, AK Upadhyay
Microelectronics Journal 116, 105242, 2021
442021
Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
AK Upadhyay, SB Rahi, S Tayal, YS Song
Microelectronics Journal 129, 105583, 2022
272022
A unified scalable quasi-ballistic transport model of GFET for circuit simulations
AK Upadhyay, AK Kushwaha, SK Vishvakarma
IEEE Transactions on Electron Devices 65 (2), 739-746, 2017
232017
Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications
S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ...
IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022
182022
Emerging low-power semiconductor devices: Applications for future technology nodes
S Tayal, AK Upadhyay, D Kumar, SB Rahi
CRC Press, 2022
112022
Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET
YS Song, S Tayal, SB Rahi, JH Kim, AK Upadhyay, BG Park
2022 5th International Conference on Circuits, Systems and Simulation (ICCSS …, 2022
102022
Explicit model of channel charge, backscattering, and mobility for graphene FET in quasi-ballistic regime
AK Upadhyay, AK Kushwaha, P Rastogi, YS Chauhan, SK Vishvakarma
IEEE Transactions on Electron Devices 65 (12), 5468-5474, 2018
102018
Impact of drain underlap and high bandgap strip on cylindrical gate all around tunnel FET and its influence on analog/RF performance
A Dutt, S Tiwari, AK Upadhyay, R Mathew, A Beohar
Silicon 14 (15), 9789-9796, 2022
82022
A compact electrical modelling for top-gated doped graphene field-effect transistor
AK Upadhyay, N Chauhan, SK Vishvakarma
IETE Journal of Research 64 (3), 317-323, 2018
62018
Design techniques for high reliability FET by incorporating new materials and electrical/thermal co-optimization
YS Song, SB Rahi, S Tayal, A Upadhyay, JH Kim
Emerging Materials: Design, Characterization and Applications, 133-154, 2022
52022
An improved current mode logic latch for high‐speed applications
M Kumawat, AK Upadhyay, S Sharma, R Kumar, G Singh, ...
International Journal of Communication Systems 33 (13), e4118, 2020
52020
Recent development in analytical model for graphene field effect transistors for RF circuit applications
AK Upadhyay, AK Kushwaha, D Gupta, SK Vishvakarma
arXiv preprint arXiv:2101.01955, 2021
22021
High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications
R Mathew, A Beohar, AK Upadhyay
Semiconductor Devices and Technologies for Future Ultra Low Power …, 2021
22021
Performance Comparison of Nanosheet FET, CombFET and TreeFET: Device and Circuit Perspective
NA Kumari, VB Sreenivasulu, V Vijayvargiya, AK Upadhyay, J Ajayan, ...
IEEE Access, 2024
12024
Gate Stack Analysis of Nanosheet FET for Analog and Digital Circuit Applications
NA Kumari, V Vijayvargiya, AK Upadhyay, VB Sreenivasulu, V Narendar, ...
ECS Journal of Solid State Science and Technology 12 (11), 113008, 2023
12023
Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications
YS Song, S Tayal, SB Rahi, AK Upadhyay
CRC Press, 2023
12023
Performance Comparison of FPGA based Linear SVMS Classifier and Computer Simulation
MK Singh, DK Jhariya, R Singh, A Upadhyay
2023 2nd International Conference on Paradigm Shifts in Communications …, 2023
12023
A compact model of the backscattering coefficient and mobility of a graphene FET for and h-BN substrates
AK Upadhyay, D Gupta, R Mathew, A Beohar
Journal of Computational Electronics 22 (1), 88-95, 2023
12023
Compact modeling of graphene field effect transistors for RF circuit applications
AK Upadhyay
Indore, 2019
12019
Design and analysis of novel La: HfO2 gate stacked ferroelectric tunnel FET for non-volatile memory applications
N Paras, SB Rahi, AK Upadhyay, M Bharti, YS Song
Memories-Materials, Devices, Circuits and Systems, 100101, 2024
2024
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