Arunas Kadys
Cited by
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Antibacterial and antifungal activity of photoactivated ZnO nanoparticles in suspension
K Kairyte, A Kadys, Z Luksiene
Journal of Photochemistry and Photobiology B: Biology 128, 78-84, 2013
Black silicon: substrate for laser 3D micro/nano-polymerization
A Žukauskas, M Malinauskas, A Kadys, G Gervinskas, G Seniutinas, ...
Optics express 21 (6), 6901-6909, 2013
Silicon detectors for the sLHC
A Affolder, A Aleev, PP Allport, L Andricek, M Artuso, JP Balbuena, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011
InxGa1− xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions
J Juodkazytė, B Šebeka, I Savickaja, A Kadys, E Jelmakas, T Grinys, ...
Solar energy materials and solar cells 130, 36-41, 2014
Optical and structural properties of BGaN layers grown on different substrates
A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
Remote epitaxy of GaN via graphene on GaN/sapphire templates
K Badokas, A Kadys, J Mickevičius, I Ignatjev, M Skapas, S Stanionytė, ...
Journal of Physics D: Applied Physics 54 (20), 205103, 2021
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ...
Applied Surface Science 427, 1027-1032, 2018
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition
A Kadys, T Malinauskas, T Grinys, M Dmukauskas, J Mickevičius, ...
Journal of Electronic Materials 44, 188-193, 2015
Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD
T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ...
physica status solidi (b) 252 (5), 1138-1141, 2015
Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells
R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ...
Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013
Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
T Malinauskas, A Kadys, T Grinys, S Nargelas, R Aleksiejūnas, ...
Gallium Nitride Materials and Devices Vii 8262, 269-276, 2012
Photoluminescence efficiency of BGaN epitaxial layers with high boron content
J Jurkevičius, J Mickevičius, A Kadys, M Kolenda, G Tamulaitis
Physica B: Condensed Matter 492, 23-26, 2016
Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ...
AIP advances 6 (4), 2016
In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation
E Gaubas, V Kovalevskij, A Kadys, M Gaspariunas, J Mickevicius, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013
Nonlinear carrier recombination and transport features in highly excited InN layer
S Nargelas, T Malinauskas, A Kadys, E Dimakis, TD Moustakas, ...
physica status solidi c 6 (S2 2), S735-S738, 2009
Application of picosecond four‐wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
K Jarašiūnas, T Malinauskas, A Kadys, R Aleksiejūnas, M Sūdžius, ...
physica status solidi (c) 2 (3), 1006-1009, 2005
Direct Auger recombination and density-dependent hole diffusion in InN
R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ...
Scientific reports 8 (1), 4621, 2018
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ...
Journal of Crystal Growth 459, 173-177, 2017
A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser
E Jelmakas, A Kadys, T Malinauskas, D Paipulas, D Dobrovolskas, ...
Journal of Physics D: Applied Physics 48 (28), 285104, 2015
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