Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline M Clairotte, TW Adam, AA Zardini, U Manfredi, G Martini, A Krasenbrink, ... Applied Energy 102, 44-54, 2013 | 185 | 2013 |
On the origin of carrier localization in quantum wells MA Pinault, E Tournie Applied Physics Letters 78 (11), 1562-1564, 2001 | 171 | 2001 |
Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 143 | 2014 |
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures E Tournié, KH Ploog Thin Solid Films 231 (1-2), 43-60, 1993 | 113 | 1993 |
Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing E Tournié, MA Pinault, A Guzmán Applied physics letters 80 (22), 4148-4150, 2002 | 112 | 2002 |
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ... Optics express 21 (5), 6101-6108, 2013 | 110 | 2013 |
Near-field thermophotovoltaic conversion with high electrical power density and cell efficiency above 14% C Lucchesi, D Cakiroglu, JP Perez, T Taliercio, E Tournié, PO Chapuis, ... Nano Letters 21 (11), 4524-4529, 2021 | 105 | 2021 |
Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si JR Reboul, L Cerutti, JB Rodriguez, P Grech, E Tournié Applied Physics Letters 99 (12), 2011 | 104 | 2011 |
Nanoindentation of Si, GaP, GaAs and ZnSe single crystals SE Grillo, M Ducarroir, M Nadal, E Tournie, JP Faurie Journal of Physics D: Applied Physics 36 (1), L5, 2002 | 99 | 2002 |
GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55m at Room Temperature L Cerutti, JB Rodriguez, E Tournié IEEE photonics technology letters 22 (8), 553-555, 2010 | 97 | 2010 |
Quantum cascade lasers grown on silicon H Nguyen-Van, AN Baranov, Z Loghmari, L Cerutti, JB Rodriguez, ... Scientific reports 8 (1), 7206, 2018 | 87 | 2018 |
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... Optical Materials Express 3 (9), 1523-1536, 2013 | 85 | 2013 |
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ... Journal of applied physics 94 (4), 2319-2324, 2003 | 83 | 2003 |
Semiconductor lasers: Fundamentals and applications A Baranov, E Tournié Elsevier, 2013 | 82 | 2013 |
Localized surface plasmon resonances in highly doped semiconductors nanostructures V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio Applied Physics Letters 101 (16), 2012 | 79 | 2012 |
Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells JM Chauveau, A Trampert, KH Ploog, E Tournié Applied physics letters 84 (14), 2503-2505, 2004 | 75 | 2004 |
Novel plastic strain‐relaxation mode in highly mismatched III‐V layers induced by two‐dimensional epitaxial growth A Trampert, E Tournie, KH Ploog Applied physics letters 66 (17), 2265-2267, 1995 | 75 | 1995 |
Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures E Tournie, N Grandjean, A Trampert, J Massies, KH Ploog Journal of crystal growth 150, 460-466, 1995 | 74 | 1995 |
Nature of the band gap in Zn 1− x Be x Se alloys C Chauvet, E Tournié, JP Faurie Physical Review B 61 (8), 5332, 2000 | 72 | 2000 |
Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration T Taliercio, VN Guilengui, L Cerutti, E Tournié, JJ Greffet Optics express 22 (20), 24294-24303, 2014 | 71 | 2014 |