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Daniel S. Schulman
Daniel S. Schulman
Verified email at intel.com
Title
Cited by
Cited by
Year
Contact engineering for 2D materials and devices
DS Schulman, AJ Arnold, S Das
Chemical Society Reviews 47 (9), 3037-3058, 2018
7102018
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das
ACS nano 11 (3), 3110-3118, 2017
2622017
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ...
Science advances 5 (5), eaav5003, 2019
1612019
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
1342019
Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy
TK Patra, F Zhang, DS Schulman, H Chan, MJ Cherukara, M Terrones, ...
ACS nano 12 (8), 8006-8016, 2018
842018
Mobility deception in nanoscale transistors: an untold contact story
JR Nasr, DS Schulman, A Sebastian, MW Horn, S Das
Advanced Materials 31 (2), 1806020, 2019
772019
Thickness trends of electron and hole conduction and contact carrier injection in surface charge transfer doped 2D field effect transistors
AJ Arnold, DS Schulman, S Das
ACS nano 14 (10), 13557-13568, 2020
462020
The prospect of two-dimensional heterostructures: a review of recent breakthroughs
DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das
IEEE Nanotechnology Magazine 11 (2), 6-17, 2017
372017
Superior electro-oxidation and corrosion resistance of monolayer transition metal disulfides
DS Schulman, D May-Rawding, F Zhang, D Buzzell, N Alem, S Das
ACS applied materials & interfaces 10 (4), 4285-4294, 2018
332018
Facile electrochemical synthesis of 2D monolayers for high-performance thin-film transistors
DS Schulman, A Sebastian, D Buzzell, YT Huang, AJ Arnold, S Das
ACS applied materials & interfaces 9 (51), 44617-44624, 2017
302017
Anomalous corrosion of bulk transition metal diselenides leading to stable monolayers
YT Huang, A Dodda, DS Schulman, A Sebastian, F Zhang, D Buzzell, ...
ACS applied materials & interfaces 9 (44), 39059-39068, 2017
152017
Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2
MJ Cherukara, DS Schulmann, K Sasikumar, AJ Arnold, H Chan, ...
Nano letters 18 (3), 1993-2000, 2018
92018
2-D strain FET (2D-SFET) based SRAMs—Part I: Device-circuit interactions
N Thakuria, D Schulman, S Das, SK Gupta
IEEE Transactions on Electron Devices 67 (11), 4866-4874, 2020
62020
Polarization-induced strain-coupled TMD FETs (PS FETs) for non-volatile memory applications
N Thakuria, AK Saha, SK Thirumala, D Schulman, S Das, SK Gupta
2020 Device Research Conference (DRC), 1-2, 2020
62020
Contact, interface, and strain engineering of two-dimensional transition metal dichalcogenide field effect transistors
DS Schulman
The Pennsylvania State University, 2019
52019
2D strain FET (2D-SFET)-based SRAMs—Part II: Back voltage-enabled designs
N Thakuria, D Schulman, S Das, SK Gupta
IEEE Transactions on Electron Devices 67 (11), 4875-4883, 2020
42020
2-transistor schmitt trigger based on 2D electrostrictive field effect transistors
N Thakuria, D Schulmarr, S Das, SK Gupta
2018 76th Device Research Conference (DRC), 1-2, 2018
42018
Steep slope 2D strain field effect transistor: 2D-SFET
D Schulman, A Arnold, S Das
2018 International Symposium on VLSI Technology, Systems and Application …, 2018
42018
Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly
OZ Gall, X Zhong, DS Schulman, M Kang, A Razavieh, TS Mayer
Nanotechnology 28 (26), 265501, 2017
42017
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