| Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices Y Li, HT Chang, CN Lai, PJ Chao, CY Chen 2015 IEEE International Electron Devices Meeting (IEDM), 34.4. 1-34.4. 4, 2015 | 63 | 2015 |
| Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression CY Chang, FM Pan, JS Lin, TY Yu, YM Li, CY Chen Journal of Applied Physics 120 (23), 2016 | 17 | 2016 |
| Drain-induced-barrier lowering and subthreshold swing fluctuations in 16-nm-gate bulk FinFET devices induced by random discrete dopants HW Su, Y Li, YY Chen, CY Chen, HT Chang 70th Device Research Conference, 109-110, 2012 | 14 | 2012 |
| Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices CH Chen, Y Li, CY Chen, YY Chen, SC Hsu, WT Huang, SY Chu Microelectronic engineering 109, 357-359, 2013 | 12 | 2013 |
| High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications YJ Lee, TC Hong, FK Hsueh, PJ Sung, CY Chen, SS Chuang, TC Cho, ... 2016 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2016 | 11 | 2016 |
| Device simulation–based multiobjective evolutionary algorithm for process optimization of semiconductor solar cells Y Li, YY Chen, CY Chen, CH Shen, HW Cheng, IH Lo, CN Chen Materials and manufacturing processes 28 (7), 761-767, 2013 | 7 | 2013 |
| Characteristic fluctuations of dynamic power delay induced by random nanosized titanium nitride grains and the aspect ratio effect of gate-all-around nanowire CMOS devices and … Y Li, CY Chen, MH Chuang, PJ Chao Materials 12 (9), 1492, 2019 | 6 | 2019 |
| Capacitance characteristic optimization of germanium MOSFETs with aluminum oxide by using a semiconductor-device-simulation-based multi-objective evolutionary algorithm method Y Li, CY Chen Materials and Manufacturing Processes 30 (4), 520-528, 2015 | 6 | 2015 |
| Electrical characteristic and power consumption fluctuations of trapezoidal bulk FinFET devices and circuits induced by random line edge roughness CY Chen, WT Huang, Y Li Sixteenth International Symposium on Quality Electronic Design, 61-64, 2015 | 6 | 2015 |
| Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around Si nanowire metal-oxide-semiconductor devices CN Lai, CY Chen, Y Li 2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015 | 4 | 2015 |
| Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs Y Li, CY Chen, YY Chen International Journal of Nanotechnology 11 (12), 1029-1038, 2014 | 4 | 2014 |
| Numerical Calculation of Electronic Properties of Transition Metal-Doped mWS2 via DFT CY Chen, Y Li Scientific Computing in Electrical Engineering: SCEE 2020, Eindhoven, The …, 2021 | 2 | 2021 |
| Circuit-simulation-based multi-objective evolutionary algorithm with multi-level clock driving technique for a-Si: H TFTs gate driver circuit design optimization SC Hung, CY Chen, CH Chiang, Y Li Intelligent Systems and Applications, IOS Press, Amsterdam, 157-166, 2015 | 1 | 2015 |
| Upper/lower–side random dopant fluctuation on 16–nm–gate HKMG bulk FinFET Y Li, WT Huang, CY Chen, YY Chen International Journal of Nanotechnology 12 (1-2), 126-138, 2015 | 1 | 2015 |
| Device simulation and multi-objective genetic algorithm-based optimization of germanium metal-oxide-semiconductor structure CY Chen, Y Li Computer Methods in Materials Science 15 (1), 258--263, 2015 | 1 | 2015 |
| Electrical Transport and Thermoelectric Properties of Cr-doped Monolayer MoS2 and WS2 via Density Functional Theory and Boltzmann Transport Simulation CY Chen, Y Li 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | | 2021 |
