Follow
Uygar E. Avci
Uygar E. Avci
Components Research, Intel Corp.
Verified email at intel.com
Title
Cited by
Cited by
Year
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
6042021
Tunnel field-effect transistors: Prospects and challenges
UE Avci, DH Morris, IA Young
IEEE Journal of the Electron Devices Society 3 (3), 88-95, 2015
5282015
Scaled TFET transistor formed using nanowire with surface termination
UE Avci, R Rios, KJ Kuhn, IA Young, JR Weber
US Patent 10,535,770, 2020
3902020
Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic
UE Avci, R Rios, K Kuhn, IA Young
2011 Symposium on VLSI Technology-Digest of Technical Papers, 124-125, 2011
1662011
Three-dimensional ferroelectric NOR-type memory
DH Morris, UE Avci, IA Young
US Patent 10,651,182, 2020
1652020
Floating body cell with independently-controlled double gates for high density memory
I Ban, UE Avci, U Shah, CE Barns, DL Kencke, P Chang
2006 International Electron Devices Meeting, 1-4, 2006
1352006
Floating body memory cell having gates favoring different conductivity type regions
PLD Chang, UE Avci, DL Kencke, I Ban
US Patent 8,217,435, 2012
1282012
Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors
R Kotlyar, UE Avci, S Cea, R Rios, TD Linton, KJ Kuhn, IA Young
Applied Physics Letters 102 (11), 2013
1192013
Heterojunction TFET scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length
UE Avci, IA Young
2013 IEEE International Electron Devices Meeting, 4.3. 1-4.3. 4, 2013
1182013
Design of low voltage tunneling-FET logic circuits considering asymmetric conduction characteristics
DH Morris, UE Avci, R Rios, IA Young
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 4 (4 …, 2014
1082014
The ultimate CMOS device and beyond
KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ...
2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012
962012
Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations
UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ...
2013 IEEE International Electron Devices Meeting, 33.4. 1-33.4. 4, 2013
922013
Physical origin of transient negative capacitance in a ferroelectric capacitor
SC Chang, UE Avci, DE Nikonov, S Manipatruni, IA Young
Physical Review Applied 9 (1), 014010, 2018
902018
Advancing 2D monolayer CMOS through contact, channel and interface engineering
KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ...
2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021
882021
Understanding the feasibility of scaled III–V TFET for logic by bridging atomistic simulations and experimental results
UE Avci, S Hasan, DE Nikonov, R Rios, K Kuhn, IA Young
2012 Symposium on VLSI Technology (VLSIT), 183-184, 2012
732012
3d-ferroelectric random access memory (3d-fram)
S Shivaraman, SC Chang, AV Penumatcha, N Haratipour, UE Avci
US Patent App. 16/599,422, 2021
672021
Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction
M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye
ACS nano 15 (3), 5689-5695, 2021
652021
Advancing monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling
C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ...
IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021
632021
Field Effect Transistors Having Ferroelectric or Antiferroelectric Gate Dielectric Structure
S Kim, UE Avci, JM Howard, IA Young, DH Morris
US Patent 11,735,652, 2023
582023
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
562023
The system can't perform the operation now. Try again later.
Articles 1–20