| Metal and silicon containing capping layers for interconnects J Yu, G Jiang, P Subramonium, R Shaviv, HJ Wu, N Shankar US Patent 8,753,978, 2014 | 391 | 2014 |
| Method and apparatus for purging and plasma suppression in a process chamber P Breiling, K Gerber, J O'loughlin, N Shankar, P Subramonium US Patent 9,399,228, 2016 | 328 | 2016 |
| Synthesis of tungsten oxide (WO3) nanorods using carbon nanotubes as templates by hot filament chemical vapor deposition N Shankar, MF Yu, SP Vanka, NG Glumac Materials Letters 60 (6), 771-774, 2006 | 82 | 2006 |
| Decomposition of aluminum hydride under solid rocket motor conditions T Bazyn, H Krier, N Glumac, N Shankar, X Wang, TL Jackson Journal of Propulsion and Power 23 (2), 457-464, 2007 | 59 | 2007 |
| Growth of nanodiamond/carbon-nanotube composites with hot filament chemical vapor deposition N Shankar, NG Glumac, MF Yu, SP Vanka Diamond and related materials 17 (1), 79-83, 2008 | 57 | 2008 |
| High growth rate process for conformal aluminum nitride S Swaminathan, A Banerji, N Shankar, A Lavoie US Patent 9,214,334, 2015 | 55 | 2015 |
| Selective formation of dielectric barriers for metal interconnects in semiconductor devices TW Mountsier, HJ Wu, BN Varadarajan, N Shankar, WT Lee US Patent 9,418,889, 2016 | 45 | 2016 |
| OH concentration profiles over alumina, quartz, and platinum surfaces using laser-induced fluorescence spectroscopy in low-pressure hydrogen/oxygen flames S Prakash, NG Glumac, N Shankar, MA Shannon Combustion science and technology 177 (4), 793-817, 2005 | 39 | 2005 |
| High growth rate process for conformal aluminum nitride S Swaminathan, A Banerji, N Shankar, A Lavoie US Patent App. 14/932,869, 2016 | 33 | 2016 |
| Selective deposition with atomic layer etch reset KS Reddy, MG Rainville, N Shankar, DM Hausmann, DC Smith, ... US Patent 10,559,461, 2020 | 24 | 2020 |
| Liner and barrier applications for subtractive metal integration HJ Wu, TJ Knisley, N Shankar, M Shen, J Hoang, P Sharma US Patent 9,899,234, 2018 | 22 | 2018 |
| Staircase encapsulation in 3D NAND fabrication Y Yu, BJ Van Schravendijk, N Shankar, BN Varadarajan US Patent 10,580,690, 2020 | 20 | 2020 |
| Methods for formation of low-k aluminum-containing etch stop films D Damjanovic, P Subramonium, N Shankar US Patent 9,633,896, 2017 | 18 | 2017 |
| Deposition of Aluminum oxide etch stop layers MG Rainville, N Shankar, KS Reddy, DM Hausmann US Patent 10,665,501, 2020 | 16 | 2020 |
| Sacrificial pre-metal dielectric for self-aligned contact scheme TW Mountsier, BJ Van Schravendijk, AK Banerji, N Shankar US Patent 9,190,489, 2015 | 16 | 2015 |
| Methods and apparatus for selective deposition of cobalt in semiconductor processing TJ Knisley, N Shankar, P Subramonium US Patent 9,153,482, 2015 | 15 | 2015 |
| Deposition of aluminum oxide etch stop layers MG Rainville, N Shankar, KS Reddy, DM Hausmann US Patent 9,859,153, 2018 | 12 | 2018 |
| Oxidizing treatment of aluminum nitride films in semiconductor device manufacturing MG Rainville, N Shankar, D Damjanovic, KS Reddy US Patent 10,651,080, 2020 | 11 | 2020 |
| Experimental investigations into the effect of temperature slip on catalytic combustion N Shankar, N Glumac CHEMICAL AND PHYSICAL PROCESSES IN COMBUSTION, 361-364, 2003 | 9 | 2003 |
| Sacrificial pre-metal dielectric for self-aligned contact scheme TW Mountsier, BJ Van Schravendijk, AK Banerji, N Shankar US Patent 9,379,210, 2016 | 7 | 2016 |
Jengyi E. YuLam ResearchVerified email at lamresearch.com
