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Dr. Shiromani Balmukund  Rahi
Dr. Shiromani Balmukund Rahi
Research Scholar
Verified email at iitk.ac.in
Title
Cited by
Cited by
Year
Heterogate junctionless tunnel field-effect transistor: future of low-power devices
SB Rahi, P Asthana, S Gupta
Journal of Computational Electronics 16, 30-38, 2017
532017
Temperature effect on hetero structure junctionless tunnel FET
SB Rahi, B Ghosh, B Bishnoi
Journal of semiconductors 36 (3), 034002, 2015
362015
High-k double gate junctionless tunnel FET with a tunable bandgap
SB Rahi, B Ghosh
RSC Advances 5 (67), 54544-54550, 2015
322015
Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications
PK Asthana, Y Goswami, S Basak, SB Rahi, B Ghosh
RSC Advances 5 (60), 48779-48785, 2015
312015
Optimal design for a high performance H-JLTFET using HfO 2 as a gate dielectric for ultra low power applications
PK Asthana, B Ghosh, SBM Rahi, Y Goswami
RSC Advances 4 (43), 22803-22807, 2014
312014
Identifying the moderating effect of trust on the adoption of cloud‐based services
SB Rahi, S Bisui, SC Misra
International Journal of Communication Systems 30 (11), e3253, 2017
272017
A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET
SB Rahi, B Ghosh, P Asthana
Journal of Semiconductors 35 (11), 114005, 2014
242014
Identifying critical challenges in the adoption of cloud‐based services
SB Rahi, S Bisui, SC Misra
International Journal of Communication Systems 30 (12), e3261, 2017
202017
Rigorous study of double gate tunneling field effect transistor structure based on silicon
N Guenifi, SB Rahi, T Ghodbane
Materials Focus 7 (6), 866-872, 2018
182018
A review on emerging negative capacitance field effect transistor for low power electronics
SB Rahi, S Tayal, AK Upadhyay
Microelectronics Journal 116, 105242, 2021
132021
Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications
SBRML N Guenifi
International Journal of Nanoparticles and Nanotechnology 6 (1), 1-12, 2020
112020
Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect
S Gupta, B Ghosh, SB Rahi
Journal of Semiconductors 36 (2), 024001, 2015
112015
Performance evaluation of double gate tunnel FET based chain of inverters and 6-T SRAM cell
D Kumar
Engineering Research Express 1 (2), 025055, 2019
102019
Factors influencing the success of cloud adoption in the semiconductor industry
SC Misra, SB Rahi, S Bisui, A Singh
Software Quality Professional 21 (2), 38-51, 2019
92019
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics
D Nirmal, J Ajayan, PJ Fay
CRC Press, 2021
62021
Low power circuit and system design hierarchy and thermal reliability of tunnel field effect transistor
G Naima, SB Rahi
Silicon, 1-11, 2021
52021
A review report for next generation of CMOS technology as spintronics: fundamentals, applications and future
SB Rahi, P Rastogi
International Journal of Advances in Engineering & Technology 6 (2), 696, 2013
52013
Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET
YS Song, S Tayal, SB Rahi, JH Kim, AK Upadhyay, BG Park
2022 5th International Conference on Circuits, Systems and Simulation (ICCSS …, 2022
42022
Electrical and Electronic Devices, Circuits, and Materials: Technological Challenges and Solutions
SL Tripathi, PA Alvi, U Subramaniam
John Wiley & Sons, 2021
32021
Design techniques for high reliability FET by incorporating new materials and electrical/thermal co-optimization
YS Song, SB Rahi, S Tayal, A Upadhyay, JH Kim
Emerging Materials: Design, Characterization and Applications, 133-154, 2022
22022
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