Dr. Shiromani Balmukund Rahi

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	All	Since 2019
Citations	597	529
h-index	14	14
i10-index	21	21

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20152016201720182019202020212022202320249 14 14 25 65 53 64 116 181 35

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Shubham TayalSynopsys India Pvt. Ltd., HyderabadVerified email at nitkkr.ac.in
Abhishek UpadhyayX-FAB Dresden GmbH & Co. KGVerified email at xfab.com
Young Suh SongDepartment of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
Billel SmaaniCentre Universitaire Abdelhafid Boussouf - MilaVerified email at centre-univ-mila.dz
Samir LabiodVerified email at univ-skikda.dz
Shoubhik GuptaInfineon Technologies, AustriaVerified email at infineon.com
Yogesh GoswamiIndian Institute of Technology KanpurVerified email at iitkalumni.org
Suman Lata TripathiLovely Professional UniversityVerified email at lpu.co.in
Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityVerified email at snu.ac.kr
Neha ParasJawaharlal Nehru UniversityVerified email at mail.jnu.ac.in
Dr. J. AjayanProfessor & Dean Post Graduation Programs, SR University, TelanganaVerified email at sru.edu.in
Arun SamuelNational Engineering CollegeVerified email at nec.edu.in
Dr.Sandip BhattacharyaProfessor & Head, ECE, SR University, PDF from HiSIM Research Center, Hiroshima University, 🗾Verified email at sru.edu.in
Dr. Ramakant YadavÉcole Centrale School of Engineering, Mahindra UniversityVerified email at mahindrauniversity.edu.in
Dr. BISWAJIT JENAVellore Institute of Technology - VIT ChennaiVerified email at vit.ac.in
Dr. Deepak KumarTechnische Universität Dresden — TU Dresden, GermanyVerified email at tu-dresden.de
Shibir BasakM.Tech from Dept. of Elect. Engg., Indian Institute of Technology, KanpurVerified email at iitk.ac.in
Jang Hyun KimAjou UniversityVerified email at ajou.ac.kr
Dr. Chandan Kumar PandeyAssistant Professor (School of Electronics Engineering), VIT-AP UniversityVerified email at vitap.ac.in
I.Vivek Anand ECEVerified email at nec.edu.in

Dr. Shiromani Balmukund Rahi

Verified email at iitk.ac.in - Homepage

Semiconductor Device Modeling &Simulations Tunnel FET NCFET Nanosheet FETs


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Heterogate junctionless tunnel field-effect transistor: future of low-power devices SB Rahi, P Asthana, S Gupta Journal of Computational Electronics 16, 30-38, 2017	68	2017
A review on emerging negative capacitance field effect transistor for low power electronics SB Rahi, S Tayal, AK Upadhyay Microelectronics Journal 116, 105242, 2021	44	2021
Temperature effect on hetero structure junctionless tunnel FET SB Rahi, B Ghosh, B Bishnoi Journal of semiconductors 36 (3), 034002, 2015	44	2015
Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications PK Asthana, Y Goswami, S Basak, SB Rahi, B Ghosh RSC Advances 5 (60), 48779-48785, 2015	39	2015
High-k double gate junctionless tunnel FET with a tunable bandgap SB Rahi, B Ghosh RSC Advances 5 (67), 54544-54550, 2015	37	2015
Optimal design for a high performance H-JLTFET using HfO 2 as a gate dielectric for ultra low power applications PK Asthana, B Ghosh, SBM Rahi, Y Goswami RSC Advances 4 (43), 22803-22807, 2014	34	2014
Identifying the moderating effect of trust on the adoption of cloud‐based services SB Rahi, S Bisui, SC Misra International Journal of Communication Systems 30 (11), e3253, 2017	31	2017
A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET SB Rahi, B Ghosh, P Asthana Journal of semiconductors 35 (11), 114005, 2014	29	2014
Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective AK Upadhyay, SB Rahi, S Tayal, YS Song Microelectronics Journal 129, 105583, 2022	27	2022
Identifying critical challenges in the adoption of cloud‐based services SB Rahi, S Bisui, SC Misra International Journal of Communication Systems 30 (12), e3261, 2017	23	2017
Rigorous study of double gate tunneling field effect transistor structure based on silicon N Guenifi, SB Rahi, T Ghodbane Materials Focus 7 (6), 866-872, 2018	20	2018
Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ... IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022	18	2022
Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications SBRML N Guenifi International Journal of Nanoparticles and Nanotechnology 6 (1), 1-12, 2020	17	2020
Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect S Gupta, B Ghosh, SB Rahi Journal of Semiconductors 36 (2), 024001, 2015	15	2015
Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET M Sathishkumar, TSA Samuel, K Ramkumar, IV Anand, SB Rahi Superlattices and Microstructures 162, 107099, 2022	14	2022
Performance evaluation of double gate tunnel FET based chain of inverters and 6-T SRAM cell D Kumar Engineering Research Express 1 (2), 025055, 2019	14	2019
Factors influencing the success of cloud adoption in the semiconductor industry SC Misra, SB Rahi, S Bisui, A Singh Software Quality Professional 21 (2), 38-51, 2019	14	2019
Electrical and Electronic Devices, Circuits, and Materials: Technological Challenges and Solutions SL Tripathi, PA Alvi, U Subramaniam John Wiley & Sons, 2021	13	2021
Emerging low-power semiconductor devices: Applications for future technology nodes S Tayal, AK Upadhyay, D Kumar, SB Rahi CRC Press, 2022	11	2022
Low power circuit and system design hierarchy and thermal reliability of tunnel field effect transistor G Naima, SB Rahi Silicon, 1-11, 2021	11	2021

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