Follow
Dr. J. Ajayan
Dr. J. Ajayan
Professor at SR University
Verified email at sru.edu.in
Title
Cited by
Cited by
Year
Recent developments in biosensors for healthcare and biomedical applications: A review
P Mohankumar, J Ajayan, T Mohanraj, R Yasodharan
Measurement 167, 108293, 2021
1922021
A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies
J Ajayan, D Nirmal, P Mohankumar, M Saravanan, M Jagadesh, ...
Superlattices and Microstructures 143, 106549, 2020
1482020
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
J Ajayan, D Nirmal
Superlattices and Microstructures 86, 1-19, 2015
1482015
A review of micromachined sensors for automotive applications
P Mohankumar, J Ajayan, R Yasodharan, P Devendran, R Sambasivam
Measurement 140, 305-322, 2019
1162019
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
JC Pravin, D Nirmal, P Prajoon, J Ajayan
Physica E: Low-dimensional systems and nanostructures 83, 95-100, 2016
1072016
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
812017
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ...
Microelectronics Journal 114, 105141, 2021
792021
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan
AEU-International Journal of Electronics and Communications 99, 325-330, 2019
742019
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ...
AEU-International Journal of Electronics and Communications 94, 199-214, 2018
702018
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ...
Materials Science in Semiconductor Processing 151, 106982, 2022
612022
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
512018
20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications
J Ajayan, D Nirmal
Superlattices and Microstructures 100, 526-534, 2016
472016
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
J Ajayan, D Nirmal
International Journal of Electronics 104 (3), 504-512, 2017
462017
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ...
AEU-International Journal of Electronics and Communications 108, 189-194, 2019
432019
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
J Ajayan, D Nirmal, P Mohankumar, D Kuriyan, ASA Fletcher, ...
Microelectronics Journal 92, 104604, 2019
422019
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
B Mounika, J Ajayan, S Bhattacharya, D Nirmal
Micro and Nanostructures 168, 207317, 2022
412022
A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
J Ajayan, D Nirmal, R Mathew, D Kurian, P Mohankumar, L Arivazhagan, ...
Materials Science in Semiconductor Processing 128, 105753, 2021
392021
Handbook for III-V high electron mobility transistor technologies
D Nirmal, J Ajayan
CRC Press, 2019
382019
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
AS Augustine Fletcher, D Nirmal, L Arivazhagan, J Ajayan, A Varghese
International Journal of RF and Microwave Computer‐Aided Engineering 30 (2 …, 2020
372020
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
JC Pravin, D Nirmal, P Prajoon, NM Kumar, J Ajayan
Superlattices and Microstructures 104, 470-476, 2017
352017
The system can't perform the operation now. Try again later.
Articles 1–20