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Malleswararao Tangi
Malleswararao Tangi
Assistant Professor of Physics, IIT Guwahati
Verified email at iitg.ac.in - Homepage
Title
Cited by
Cited by
Year
Determination of band offsets at GaN/single-layer MoS2 heterojunction
M Tangi, P Mishra, TK Ng, MN Hedhili, B Janjua, MS Alias, DH Anjum, ...
Applied Physics Letters 109 (3), 032104, 2016
932016
Band Alignment at GaN/Single-Layer WSe2 Interface
M Tangi, P Mishra, CC Tseng, TK Ng, MN Hedhili, DH Anjum, MS Alias, ...
ACS applied materials & interfaces 9 (10), 9110-9117, 2017
792017
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
MS Alias, M Tangi, JA Holguin-Lerma, E Stegenburgs, AA Alatawi, I Ashry, ...
Journal of Nanophotonics 12 (4), 043508-043508, 2018
602018
Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy
P Mishra, M Tangi, TK Ng, MN Hedhili, DH Anjum, MS Alias, CC Tseng, ...
Applied Physics Letters 110 (1), 2017
462017
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
N Alfaraj, JW Min, CH Kang, AA Alatawi, D Priante, RC Subedi, M Tangi, ...
Journal of Semiconductors 40 (12), 121801, 2019
432019
Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
JW Min, D Priante, M Tangi, G Liu, CH Kang, A Prabaswara, C Zhao, ...
Journal of Nanophotonics 12 (4), 043511-043511, 2018
342018
Type-I band alignment at MoS2/In0. 15Al0. 85N lattice matched heterojunction and realization of MoS2 quantum well
M Tangi, P Mishra, MY Li, MK Shakfa, DH Anjum, MN Hedhili, TK Ng, ...
Applied Physics Letters 111 (9), 2017
322017
Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes
M Tangi, P Mishra, B Janjua, A Prabaswara, C Zhao, D Priante, JW Min, ...
Journal of Applied Physics 123 (10), 2018
282018
Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy
M Tangi, J Kuyyalil, SM Shivaprasad
Journal of Applied Physics 114 (15), 2013
262013
Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy
M Tangi, JW Min, D Priante, RC Subedi, DH Anjum, A Prabaswara, ...
Nano Energy 54, 264-271, 2018
252018
Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy
M Tangi, A De, SM Shivaprasad
Journal of Applied Physics 123 (1), 2018
192018
Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes
D Priante, M Tangi, JW Min, N Alfaraj, JW Liang, H Sun, HH Alhashim, ...
Optical Materials Express 9 (1), 203-215, 2019
182019
Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy
M Tangi, P Mishra, B Janjua, TK Ng, DH Anjum, A Prabaswara, Y Yang, ...
Journal of Applied Physics 120 (4), 2016
182016
Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires
D Priante, RT Elafandy, A Prabaswara, B Janjua, C Zhao, MS Alias, ...
Journal of Applied Physics 124 (1), 2018
162018
Anomalous photoluminescence thermal quenching of sandwiched single layer MoS2
M Tangi, MK Shakfa, P Mishra, MY Li, MH Chiu, TK Ng, LJ Li, BS Ooi
Optical Materials Express 7 (10), 3697-3705, 2017
162017
Enhancing the light-extraction efficiency of an AlGaN nanowire ultraviolet light-emitting diode by using nitride/air distributed Bragg reflector nanogratings
MS Alias, B Janjua, C Zhao, D Priante, AA Alhamoud, M Tangi, ...
IEEE Photonics Journal 9 (5), 1-8, 2017
162017
High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime
MS Alias, AA Alatawi, WK Chong, M Tangi, JA Holguin-Lerma, ...
IEEE Photonics Journal 10 (2), 1-8, 2018
142018
Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy
M Tangi, J Kuyyalil, SM Shivaprasad
Journal of Applied Physics 112 (7), 2012
142012
Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
J Kuyyalil, M Tangi, SM Shivaprasad
Journal of Applied Physics 109 (9), 2011
132011
Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template
M Tangi, A De, J Ghatak, SM Shivaprasad
Journal of Applied Physics 119 (20), 2016
122016
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