| Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ... Nano letters 14 (12), 6976-6982, 2014 | 710 | 2014 |
| Skyrmion-based artificial synapses for neuromorphic computing KM Song, JS Jeong, B Pan, X Zhang, J Xia, S Cha, TE Park, K Kim, ... Nature Electronics 3 (3), 148-155, 2020 | 439 | 2020 |
| Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications X Zhang, Y Zhou, KM Song, TE Park, J Xia, M Ezawa, X Liu, W Zhao, ... Journal of Physics: Condensed Matter 32 (14), 143001, 2020 | 421 | 2020 |
| Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures TE Park, L Peng, J Liang, A Hallal, FS Yasin, X Zhang, KM Song, SJ Kim, ... Physical Review B 103 (10), 104410, 2021 | 158 | 2021 |
| Reconfiguring crystal and electronic structures of MoS2 by substitutional doping J Suh, TL Tan, W Zhao, J Park, DY Lin, TE Park, J Kim, C Jin, N Saigal, ... Nature communications 9 (1), 199, 2018 | 148 | 2018 |
| Room-temperature ferromagnetism in Cu doped GaN nanowires HK Seong, JY Kim, JJ Kim, SC Lee, SR Kim, U Kim, TE Park, HJ Choi Nano letters 7 (11), 3366-3371, 2007 | 109 | 2007 |
| Rashba effect in functional spintronic devices HC Koo, SB Kim, H Kim, TE Park, JW Choi, KW Kim, G Go, JH Oh, DK Lee, ... Advanced Materials 32 (51), 2002117, 2020 | 91 | 2020 |
| Self‐formed channel devices based on vertically grown 2D materials with large‐surface‐area and their potential for chemical sensor applications C Kim, JC Park, SY Choi, Y Kim, SY Seo, TE Park, SH Kwon, B Cho, ... Small 14 (15), 1704116, 2018 | 62 | 2018 |
| Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism H Jeong, TE Park, HK Seong, M Kim, U Kim, HJ Choi Chemical Physics Letters 467 (4-6), 331-334, 2009 | 53 | 2009 |
| Tunable Néel–Bloch Magnetic Twists in Fe3GeTe2 with van der Waals Structure L Peng, FS Yasin, TE Park, SJ Kim, X Zhang, T Nagai, K Kimoto, S Woo, ... Advanced Functional Materials 31 (37), 2103583, 2021 | 39 | 2021 |
| Direct Observation of Fe‐Ge Ordering in Fe5−xGeTe2 Crystals and Resultant Helimagnetism TT Ly, J Park, K Kim, HB Ahn, NJ Lee, K Kim, TE Park, G Duvjir, NH Lam, ... Advanced Functional Materials 31 (17), 2009758, 2021 | 39 | 2021 |
| Magnetic and electrical properties of single-crystalline Mn-doped Ge nanowires HK Seong, U Kim, EK Jeon, TE Park, H Oh, TH Lee, JJ Kim, HJ Choi, ... The Journal of Physical Chemistry C 113 (25), 10847-10852, 2009 | 31 | 2009 |
| Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires TE Park, YH Park, JM Lee, SW Kim, HG Park, BC Min, H Kim, HC Koo, ... Nature communications 8 (1), 15722, 2017 | 30 | 2017 |
| Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition TE Park, J Suh, D Seo, J Park, DY Lin, YS Huang, HJ Choi, J Wu, C Jang, ... Applied Physics Letters 107 (22), 2015 | 26 | 2015 |
| Magnetic properties of vanadium-doped silicon carbide nanowires HK Seong, TE Park, SC Lee, KR Lee, JK Park, HJ Choi Metals and Materials International 15, 107-111, 2009 | 26 | 2009 |
| Exchange-induced electron transport in heavily phosphorus-doped Si nanowires TE Park, BC Min, I Kim, JE Yang, MH Jo, J Chang, HJ Choi Nano letters 11 (11), 4730-4735, 2011 | 22 | 2011 |
| Synthesis of p-type GaN nanowires SW Kim, YH Park, I Kim, TE Park, BW Kwon, WK Choi, HJ Choi Nanoscale 5 (18), 8550-8554, 2013 | 14 | 2013 |
| Interface engineering of magnetic anisotropy in van der Waals ferromagnet-based heterostructures SJ Kim, D Choi, KW Kim, KY Lee, DH Kim, S Hong, J Suh, C Lee, SK Kim, ... ACS nano 15 (10), 16395-16403, 2021 | 12 | 2021 |
| Platinum Assisted Vapor–Liquid–Solid Growth of Er–Si Nanowires and Their Optical Properties MH Kim, IS Kim, YH Park, TE Park, JH Shin, HJ Choi Nanoscale research letters 5, 286-290, 2010 | 11 | 2010 |
| Magnetic anisotropy in vertically aligned diluted magnetic Mn: Ge semiconductor nanowires U Kim, TE Park, I Kim, HK Seong, MH Kim, J Chang, JG Park, HJ Choi Journal of Applied Physics 106 (12), 2009 | 9 | 2009 |
