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Tae-Eon Park
Tae-Eon Park
한국과학기술연구원
Verified email at kist.re.kr
Title
Cited by
Cited by
Year
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
6222014
Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications
X Zhang, Y Zhou, KM Song, TE Park, J Xia, M Ezawa, X Liu, W Zhao, ...
Journal of Physics: Condensed Matter 32 (14), 143001, 2020
2832020
Skyrmion-based artificial synapses for neuromorphic computing
KM Song, JS Jeong, B Pan, X Zhang, J Xia, S Cha, TE Park, K Kim, ...
Nature Electronics 3 (3), 148-155, 2020
2632020
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
J Suh, TL Tan, W Zhao, J Park, DY Lin, TE Park, J Kim, C Jin, N Saigal, ...
Nature communications 9 (1), 199, 2018
1202018
Room-temperature ferromagnetism in Cu doped GaN nanowires
HK Seong, JY Kim, JJ Kim, SC Lee, SR Kim, U Kim, TE Park, HJ Choi
Nano letters 7 (11), 3366-3371, 2007
1112007
Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures
TE Park, L Peng, J Liang, A Hallal, FS Yasin, X Zhang, KM Song, SJ Kim, ...
Physical Review B 103 (10), 104410, 2021
812021
Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism
H Jeong, TE Park, HK Seong, M Kim, U Kim, HJ Choi
Chemical Physics Letters 467 (4-6), 331-334, 2009
492009
Self‐formed channel devices based on vertically grown 2D materials with large‐surface‐area and their potential for chemical sensor applications
C Kim, JC Park, SY Choi, Y Kim, SY Seo, TE Park, SH Kwon, B Cho, ...
Small 14 (15), 1704116, 2018
462018
Rashba effect in functional spintronic devices
HC Koo, SB Kim, H Kim, TE Park, JW Choi, KW Kim, G Go, JH Oh, DK Lee, ...
Advanced Materials 32 (51), 2002117, 2020
412020
Magnetic and electrical properties of single-crystalline Mn-doped Ge nanowires
HK Seong, U Kim, EK Jeon, TE Park, H Oh, TH Lee, JJ Kim, HJ Choi, ...
The Journal of Physical Chemistry C 113 (25), 10847-10852, 2009
302009
Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
TE Park, YH Park, JM Lee, SW Kim, HG Park, BC Min, H Kim, HC Koo, ...
Nature communications 8 (1), 15722, 2017
292017
Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition
TE Park, J Suh, D Seo, J Park, DY Lin, YS Huang, HJ Choi, J Wu, C Jang, ...
Applied Physics Letters 107 (22), 223107, 2015
262015
Magnetic properties of vanadium-doped silicon carbide nanowires
HK Seong, TE Park, SC Lee, KR Lee, JK Park, HJ Choi
Metals and Materials International 15, 107-111, 2009
262009
Exchange-induced electron transport in heavily phosphorus-doped Si nanowires
TE Park, BC Min, I Kim, JE Yang, MH Jo, J Chang, HJ Choi
Nano letters 11 (11), 4730-4735, 2011
222011
Tunable Néel–Bloch Magnetic Twists in Fe3GeTe2 with van der Waals Structure
L Peng, FS Yasin, TE Park, SJ Kim, X Zhang, T Nagai, K Kimoto, S Woo, ...
Advanced Functional Materials 31 (37), 2103583, 2021
192021
Direct Observation of Fe‐Ge Ordering in Fe5−xGeTe2 Crystals and Resultant Helimagnetism
TT Ly, J Park, K Kim, HB Ahn, NJ Lee, K Kim, TE Park, G Duvjir, NH Lam, ...
Advanced Functional Materials 31 (17), 2009758, 2021
182021
Synthesis of p-type GaN nanowires
SW Kim, YH Park, I Kim, TE Park, BW Kwon, WK Choi, HJ Choi
Nanoscale 5 (18), 8550-8554, 2013
142013
Observation of magnetic skyrmion crystals in a van der Waals ferromagnet Fe3GeTe2
TE Park, L Peng, J Liang, A Hallal, X Zhang, SJ Kim, KM Song, K Kim, ...
arXiv preprint arXiv:1907.01425, 2019
112019
Platinum Assisted Vapor–Liquid–Solid Growth of Er–Si Nanowires and Their Optical Properties
MH Kim, IS Kim, YH Park, TE Park, JH Shin, HJ Choi
Nanoscale research letters 5, 286-290, 2010
112010
Self-catalytic growth of silicon nanowires on stainless steel
MH Kim, YH Park, I Kim, TE Park, YM Sung, HJ Choi
Materials Letters 64 (21), 2306-2309, 2010
72010
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