Follow
Brian Romanczyk
Title
Cited by
Cited by
Year
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ...
IEEE Transactions on Electron Devices 65 (1), 45-50, 2017
1892017
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ...
IEEE Electron Device Letters 38 (3), 359-362, 2017
1012017
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (3), 349-352, 2020
922020
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ...
IEEE Electron Device Letters 39 (7), 1014-1017, 2018
832018
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (5), 681-684, 2020
652020
6.2 W/mm and record 33.8% pae at 94 GHz from n-polar GaN deep recess MIS-HEMTs with ALD Ru gates
W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ...
IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021
452021
N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ...
IEEE Electron Device Letters 37 (6), 713-716, 2016
452016
N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage
X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ...
IEEE Electron Device Letters 37 (1), 77-80, 2015
432015
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ...
IEEE Electron Device Letters 41 (11), 1633-1636, 2020
392020
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz
B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ...
2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016
372016
Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current
D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ...
2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012
362012
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ...
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
322016
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ...
2016 Lester Eastman Conference (LEC), 42-45, 2016
282016
First demonstration of Aluminum gallium nitride (AlGaN)-Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor
A Krishna, A Raj, N Hatui, O Koksaldi, B Romanczyk, C Gupta, S Keller, ...
arXiv preprint arXiv:1902.02022, 2019
27*2019
High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz
A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ...
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017
262017
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
SH Chan, S Keller, M Tahhan, H Li, B Romanczyk, SP DenBaars, ...
Semiconductor Science and Technology 31 (6), 065008, 2016
262016
Demonstration of 30 GHz OIP3/PDC> 10 dB by mm-wave N-polar Deep Recess MISHEMTs
M Guidry, B Romanczyk, H Li, E Ahmadi, S Wienecke, X Zheng, S Keller, ...
2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-67, 2019
252019
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High
X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ...
IEEE Electron Device Letters 39 (3), 409-412, 2018
242018
Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz
B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ...
Electronics Letters 52 (21), 1813-1814, 2016
242016
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width
M Guidry, S Wienecke, B Romanczyk, X Zheng, H Li, E Ahmadi, ...
2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016
242016
The system can't perform the operation now. Try again later.
Articles 1–20