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Daniel Lizzit
Daniel Lizzit
Verified email at uniud.it
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Year
Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells
D Saranin, S Pescetelli, A Pazniak, D Rossi, A Liedl, A Yakusheva, ...
Nano Energy 82, 105771, 2021
992021
Epitaxial growth of single-orientation high-quality MoS2 monolayers
H Bana, E Travaglia, L Bignardi, P Lacovig, CE Sanders, M Dendzik, ...
2D Materials 5 (3), 035012, 2018
732018
Novel single-layer vanadium sulphide phases
F Arnold, RM Stan, SK Mahatha, HE Lund, D Curcio, M Dendzik, H Bana, ...
2D Materials 5 (4), 045009, 2018
492018
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, , and sSi n-MOSFETs
D Lizzit, D Esseni, P Palestri, P Osgnach, L Selmi
IEEE transactions on Electron Devices 61 (6), 2027-2034, 2014
442014
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer on Au(111)
H Beyer, G Rohde, AG Čabo, A Stange, T Jacobsen, L Bignardi, D Lizzit, ...
Physical review letters 123 (23), 236802, 2019
422019
Ion Implantation Induced Structural Modifications and Functionalization of Ti3C2Tx MXenes
H Pazniak, T Bilyk, P Chartier, S Hurand, M Marteau, J Pacaud, A Liedl, ...
ECS Meeting Abstracts, 652, 2021
41*2021
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2Tx MXenes
H Pazniak, M Benchakar, T Bilyk, A Liedl, Y Busby, C Noël, P Chartier, ...
ACS nano 15 (3), 4245-4255, 2021
412021
Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes
M Rau, E Caruso, D Lizzit, P Palestri, D Esseni, A Schenk, L Selmi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2016
352016
Spin Structure of Valleys in Single-Layer on Au(111)
P Eickholt, C Sanders, M Dendzik, L Bignardi, D Lizzit, S Lizzit, A Bruix, ...
Physical review letters 121 (13), 136402, 2018
342018
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
D Lizzit, D Esseni, P Palestri, L Selmi
Journal of Applied Physics 116 (22), 223702, 2014
312014
Analysis of the performance of n-type FinFETs with strained SiGe channel
D Lizzit, P Palestri, D Esseni, A Revelant, L Selmi
IEEE transactions on electron devices 60 (6), 1884-1891, 2013
302013
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru (0001)
S Ulstrup, P Lacovig, F Orlando, D Lizzit, L Bignardi, M Dalmiglio, ...
Surface Science 678, 57-64, 2018
262018
Growth and structure of singly oriented single-layer tungsten disulfide on Au (111)
L Bignardi, D Lizzit, H Bana, E Travaglia, P Lacovig, CE Sanders, ...
Physical Review Materials 3 (1), 014003, 2019
252019
Ultrafast electronic linewidth broadening in the C core level of graphene
D Curcio, S Pakdel, K Volckaert, JA Miwa, S Ulstrup, N Lanatà, M Bianchi, ...
Physical Review B 104 (16), L161104, 2021
242021
An improved surface roughness scattering model for bulk, thin-body, and quantum-well MOSFETs
O Badami, E Caruso, D Lizzit, P Osgnach, D Esseni, P Palestri, L Selmi
IEEE Transactions on Electron Devices 63 (6), 2306-2312, 2016
232016
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing
M Bonilla, S Kolekar, J Li, Y Xin, PM Coelho, K Lasek, K Zberecki, D Lizzit, ...
Advanced Materials Interfaces 7 (15), 2000497, 2020
212020
The impact of interface states on the mobility and drive current of In0. 53Ga0. 47As semiconductor n-MOSFETs
P Osgnach, E Caruso, D Lizzit, P Palestri, D Esseni, L Selmi
Solid-State Electronics 108, 90-96, 2015
182015
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
D Lizzit, D Esseni, P Palestri, L Selmi
2013 IEEE International Electron Devices Meeting, 5.2. 1-5.2. 4, 2013
182013
Dual-route hydrogenation of the graphene/Ni interface
D Lizzit, MI Trioni, L Bignardi, P Lacovig, S Lizzit, R Martinazzo, ...
ACS nano 13 (2), 1828-1838, 2019
172019
Momentum-resolved linear dichroism in bilayer
K Volckaert, H Rostami, D Biswas, I Marković, F Andreatta, CE Sanders, ...
Physical Review B 100 (24), 241406, 2019
152019
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