Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells D Saranin, S Pescetelli, A Pazniak, D Rossi, A Liedl, A Yakusheva, ... Nano Energy 82, 105771, 2021 | 99 | 2021 |
Epitaxial growth of single-orientation high-quality MoS2 monolayers H Bana, E Travaglia, L Bignardi, P Lacovig, CE Sanders, M Dendzik, ... 2D Materials 5 (3), 035012, 2018 | 73 | 2018 |
Novel single-layer vanadium sulphide phases F Arnold, RM Stan, SK Mahatha, HE Lund, D Curcio, M Dendzik, H Bana, ... 2D Materials 5 (4), 045009, 2018 | 49 | 2018 |
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, , and sSi n-MOSFETs D Lizzit, D Esseni, P Palestri, P Osgnach, L Selmi IEEE transactions on Electron Devices 61 (6), 2027-2034, 2014 | 44 | 2014 |
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer on Au(111) H Beyer, G Rohde, AG Čabo, A Stange, T Jacobsen, L Bignardi, D Lizzit, ... Physical review letters 123 (23), 236802, 2019 | 42 | 2019 |
Ion Implantation Induced Structural Modifications and Functionalization of Ti3C2Tx MXenes H Pazniak, T Bilyk, P Chartier, S Hurand, M Marteau, J Pacaud, A Liedl, ... ECS Meeting Abstracts, 652, 2021 | 41* | 2021 |
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2Tx MXenes H Pazniak, M Benchakar, T Bilyk, A Liedl, Y Busby, C Noël, P Chartier, ... ACS nano 15 (3), 4245-4255, 2021 | 41 | 2021 |
Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes M Rau, E Caruso, D Lizzit, P Palestri, D Esseni, A Schenk, L Selmi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2016 | 35 | 2016 |
Spin Structure of Valleys in Single-Layer on Au(111) P Eickholt, C Sanders, M Dendzik, L Bignardi, D Lizzit, S Lizzit, A Bruix, ... Physical review letters 121 (13), 136402, 2018 | 34 | 2018 |
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors D Lizzit, D Esseni, P Palestri, L Selmi Journal of Applied Physics 116 (22), 223702, 2014 | 31 | 2014 |
Analysis of the performance of n-type FinFETs with strained SiGe channel D Lizzit, P Palestri, D Esseni, A Revelant, L Selmi IEEE transactions on electron devices 60 (6), 1884-1891, 2013 | 30 | 2013 |
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru (0001) S Ulstrup, P Lacovig, F Orlando, D Lizzit, L Bignardi, M Dalmiglio, ... Surface Science 678, 57-64, 2018 | 26 | 2018 |
Growth and structure of singly oriented single-layer tungsten disulfide on Au (111) L Bignardi, D Lizzit, H Bana, E Travaglia, P Lacovig, CE Sanders, ... Physical Review Materials 3 (1), 014003, 2019 | 25 | 2019 |
Ultrafast electronic linewidth broadening in the C core level of graphene D Curcio, S Pakdel, K Volckaert, JA Miwa, S Ulstrup, N Lanatà, M Bianchi, ... Physical Review B 104 (16), L161104, 2021 | 24 | 2021 |
An improved surface roughness scattering model for bulk, thin-body, and quantum-well MOSFETs O Badami, E Caruso, D Lizzit, P Osgnach, D Esseni, P Palestri, L Selmi IEEE Transactions on Electron Devices 63 (6), 2306-2312, 2016 | 23 | 2016 |
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing M Bonilla, S Kolekar, J Li, Y Xin, PM Coelho, K Lasek, K Zberecki, D Lizzit, ... Advanced Materials Interfaces 7 (15), 2000497, 2020 | 21 | 2020 |
The impact of interface states on the mobility and drive current of In0. 53Ga0. 47As semiconductor n-MOSFETs P Osgnach, E Caruso, D Lizzit, P Palestri, D Esseni, L Selmi Solid-State Electronics 108, 90-96, 2015 | 18 | 2015 |
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs D Lizzit, D Esseni, P Palestri, L Selmi 2013 IEEE International Electron Devices Meeting, 5.2. 1-5.2. 4, 2013 | 18 | 2013 |
Dual-route hydrogenation of the graphene/Ni interface D Lizzit, MI Trioni, L Bignardi, P Lacovig, S Lizzit, R Martinazzo, ... ACS nano 13 (2), 1828-1838, 2019 | 17 | 2019 |
Momentum-resolved linear dichroism in bilayer K Volckaert, H Rostami, D Biswas, I Marković, F Andreatta, CE Sanders, ... Physical Review B 100 (24), 241406, 2019 | 15 | 2019 |