| Analysis of graphene tunnel field-effect transistors for analog/RF applications B Rawat, R Paily IEEE Transactions on Electron Devices 62 (8), 2663-2669, 2015 | 29 | 2015 |
| Two-Dimensional MoS2-Based Electrochemical Biosensor for Highly Selective Detection of Glutathione B Rawat, KK Mishra, U Barman, L Arora, D Pal, RP Paily IEEE Sensors Journal 20 (13), 6937-6944, 2020 | 27 | 2020 |
| Benchmarking of analog/RF performance of fin-FET, NW-FET, and NS-FET in the ultimate scaling limit A Goel, A Rawat, B Rawat IEEE Transactions on Electron Devices 69 (3), 1298-1305, 2022 | 23 | 2022 |
| Transition metal dichalcogenide-based field-effect transistors for analog/mixed-signal applications B Rawat, MM Vinaya, R Paily IEEE Transactions on Electron Devices 66 (5), 2424-2430, 2019 | 22 | 2019 |
| Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory BR Aditya Kuber Parit, Mani Shankar Yadav, Avinash Kumar Gupta, Alexey Mikhaylov Chaos, Solitons & Fractals 145, 2021 | 18 | 2021 |
| Modeling of graphene-based field-effect transistors through a 1-D real-space approach B Rawat, R Paily Journal of Computational Electronics 17 (1), 90-100, 2018 | 17 | 2018 |
| Performance projection of 2-D material-based CMOS inverters for sub-10-nm channel length A Rawat, AK Gupta, B Rawat IEEE Transactions on Electron Devices 68 (7), 3622-3629, 2021 | 10 | 2021 |
| Performance projection of bilayer graphene nanoribbon FET through quantum mechanical simulation B Rawat, R Paily Semiconductor Science and Technology 31 (12), 125004, 2016 | 10 | 2016 |
| Performance evaluation of bilayer graphene nanoribbon tunnel FETs for digital and analog applications B Rawat, R Paily IEEE Transactions on Nanotechnology 16 (3), 411-416, 2017 | 9 | 2017 |
| Room Temperature Operated PEDOT: PSS Based Flexible and Disposable NO2 Gas Sensor A Beniwal, P Ganguly, R Gond, B Rawat, C Li IEEE Sensors Letters, 2023 | 2 | 2023 |
| The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study A Rawat, B Rawat IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
| Layer by layer Self-assembled MoS2-ZnO Heterostructure for Near Room Temperature NO2 Gas Sensor R Gond, P Shukla, M Baghoria, B Prakash, B Rawat 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | 2 | 2022 |
| Fabrication and Characterization of Liquid Phase Exfoliated MoS2 Nanosheet for Gas Sensing Application R Gond, A Rawat, M Baghoria, B Prakash, B Rawat 2023 IEEE Applied Sensing Conference (APSCON), 1-3, 2023 | 1 | 2023 |
| Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering K Poojith, K Varshney, MS Yadav, D Das, B Rawat 2022 IEEE 7th International conference for Convergence in Technology (I2CT), 1-6, 2022 | 1 | 2022 |
| Numerical modeling and analysis of graphene based field effect transistors B Rawat Guwahati, 2017 | 1 | 2017 |
| Multichannel Two-Dimensional MoS2 Nanosheet MOSFET for Future Technology Node A Rawat, B Rawat IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Vertically Aligned MoS2/ZnO Heterostructure for Highly Selective NH3 Sensing at Room Temperature R Gond, P Shukla, B Prakash, B Rawat ACS Applied Electronic Materials, 2024 | | 2024 |
| To be appear at VLSID 2024 Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode K Varshney, MS Yadav, DM Das, B Rawat Authorea Preprints, 2024 | | 2024 |
| Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode K Varshney, MS Yadav, DM Das, B Rawat 2024 37th International Conference on VLSI Design and 2024 23rd …, 2024 | | 2024 |
| Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory AK Gupta, MS Yadav, B Rawat Memories-Materials, Devices, Circuits and Systems 5, 100080, 2023 | | 2023 |
Roy PailyProfessor, Electronics and Electrical Engineering and Centre for Nanotechnology, IIT GuwahatiVerified email at iitg.ac.in
