J Charles Pravin
J Charles Pravin
Associate Professor, Kalasalingam Academy of Research and Education, Krishnankoil, Tamil Nadu, India
Verified email at klu.ac.in
Title
Cited by
Cited by
Year
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
JA J. Charles Pravin, D. Nirmal, P. Prajoon
Physica E 83 (2016), 95-100, 2016
60*2016
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
552017
A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance
JC Pravin, D Nirmal, P Prajoon, MA Menokey
IEEE Transactions on Electron Devices 63 (9), 3782 - 3789, 2016
252016
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
JA J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar
Superlattices and Microstructures 104 (2017), 470-476, 2017
192017
Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ...
AEU-International Journal of Electronics and Communications 84, 387-393, 2018
162018
Investigation of breakdown performance in L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
J Ajayan, T Ravichandran, P Prajoon, JC Pravin, D Nirmal
Journal of Computational Electronics 17 (1), 265-272, 2018
152018
A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement
JCP P. Prajoon, D. Nirmal, M. Anuja Menokey
Superlattices and Microstructures 96 (2016), 155-163, 2016
112016
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
V Sandeep, JC Pravin, AR Babu, P Prajoon
IEEE Transactions on Electron Devices 67 (9), 3558-3563, 2020
102020
Nanoscale high-k dielectrics for junctionless nanowire transistor for drain current analysis
JC Pravin, P Prajoon, FP Nesamania, G Srikesh, PS Kumar, D Nirmal
Journal of Electronic Materials 47 (5), 2679-2686, 2018
92018
Comparison and Simulation study of Cylindrical GAA NWMBCFET for sub 5 nm
SA Kumar, JC Pravin
2019 International Semiconductor Conference (CAS), 89-92, 2019
82019
Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model
JCP P. Prajoon, D. Nirmal, M. Anuja Menokey
J Comput Electron 15 (2016), 1511-1520, 2016
72016
Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate
MAMJCP P. Prajoon, D. Nirmal
JOURNAL OF DISPLAY TECHNOLOGY 12 (10), 1117-1121, 2016
72016
Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS 2 Transistor
R Sridevi, JC Pravin, AR Babu, J Ajayan
Journal of Electronic Materials 50 (6), 3295-3301, 2021
62021
Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier
P Prajoon, MA Menokey, JC Pravin, J Ajayan, S Rajesh, D Nirmal
Superlattices and Microstructures 116, 71-78, 2018
52018
Performance Evaluation of Sub 5 nm GAA NWMBCFET using Silicon Carbide Source/Drain Material
S Ashok Kumar, JC Pravin
IETE Journal of Research, 1-6, 2021
42021
Investigation of DC and RF performance of novel MOSHEMT on silicon substrate for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ...
Semiconductors 52 (16), 1991-1997, 2018
42018
Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique
R Sridevi, JC Pravin, AR Babu, D Nirmal
Silicon, 1-7, 2021
32021
Green InGaN/GaN LEDs with p-GaN interlayer for efficiency droop improvement
MA Menokey, D Nirmal, P Prajoon, JC Pravin
2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016
32016
CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics
V Sandeep, JC Pravin, AR Babu, P Prajoon
2020 4th International Conference on Electronics, Communication and …, 2020
22020
Design and simulation of 22nm FinFET structure using TCAD
R Kalaivani, JC Pravin, SA Kumar, R Sridevi
2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020
22020
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