| Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT R Poornachandran, N Mohankumar, R Saravanakumar, G Sujatha Journal of Computational Electronics 18, 1280-1290, 2019 | 8 | 2019 |
| Sheet-carrier density and IV analysis of In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As dual channel double gate HEMT for THz applications R Poornachandran, N Mohankumar, SR Kumar, G Sujatha INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND …, 2019 | 7 | 2019 |
| Noise analysis of double gate composite InAs based HEMTs for high frequency applications R Poornachandran, N Mohan Kumar, R Saravana Kumar, S Baskaran Microsystem Technologies 27, 4101-4109, 2021 | 4 | 2021 |
| Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications S Baskaran, R Saravana Kumar, V Saminathan, R Poornachandran, ... IETE Journal of Research 69 (3), 1222-1232, 2023 | 2 | 2023 |
| Influence of barrier with gate sinking on the performance of InAs composite channel DMDG-HEMT devices for high-frequency applications G Sujatha, N Mohankumar, R Poornachandran, R Saravanakumar, ... Silicon 14 (16), 10509-10520, 2022 | 1 | 2022 |
| Double-Gate (DG) InAs-based HEMT Architecture for THz Applications R Poornachandran Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications …, 2021 | 1 | 2021 |
| Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT R Poornachandran, N Mohankumar, R Saravana Kumar, G Sujatha, ... Journal of Electronic Materials 50, 3569-3579, 2021 | 1 | 2021 |
| DC and RF Characterization of InAs based Double Delta Doped MOSHEMT Device RS Kumar, R Poornachandran, S Baskaran, NM Kumar, S Sandhiya, ... 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 509-512, 2018 | 1 | 2018 |
| Noise Characterization of InAs Based Composite Channel DG-MOSHEMT with Different Gate Dielectrics G Sujatha, N Mohankumar, R Poornachandran, RS Kumar, GS Mishra, ... Silicon, 1-9, 2022 | | 2022 |
| Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials R Saravana Kumar, N Mohankumar, S Baskaran, R Poornachandran Micro-Electronics and Telecommunication Engineering: Proceedings of 4th …, 2021 | | 2021 |
| Performance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications RP N. Mohankumar, Girish Shankar Mishra, M. Arun Kumar International Journal of Advanced Trends in Computer Science and Engineering …, 2020 | | 2020 |
| Novel InAs HEMT Architectures for Terahertz Applications DG N. Mohankumar, M. Sunil, B. G. Raghunath, Katakam Jyothiprakash, Girish ... International Journal of Advanced Science and Technology 29 (3), 10207 - 10215, 2020 | | 2020 |
| Performance Analysis of Enhancement Mode Composite Channel MOSHEMT Device for Low Power Applications RS Kumar, PMR Anand, S Karthick, RN Kumar, R Poornachandran, ... 2019 International Conference on Advances in Computing and Communication …, 2019 | | 2019 |
| Noise Characterization of InAs Based DG-HEMT Devices for RF Applications R Poornachandran, N Mohankumar, RS Kumar, S Baskaran, S Kumutha 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 505-508, 2018 | | 2018 |
| Investigation of iii v compound semiconductor dual quantum well hemt devices for high frequency and low power applications R Poornachandran Chennai, 0 | | |
Dr. R. Saravana KumarAssociate Professor, School of Electronics Engineering(SENSE),VIT University -Chennai CampusVerified email at vit.ac.in
