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Stephen E. Potts
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Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels
Journal of Vacuum Science & Technology A 29 (5), 2011
10392011
Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films
SE Potts, W Keuning, E Langereis, G Dingemans, MCM Van de Sanden, ...
Journal of The Electrochemical Society 157 (7), P66, 2010
2072010
Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection
SE Potts, L Schmalz, M Fenker, B Díaz, J Światowska, V Maurice, ...
Journal of The Electrochemical Society 158 (5), C132, 2011
1292011
Atomic layer deposition
HCM Knoops, SE Potts, AA Bol, WMM Kessels
Handbook of Crystal Growth, 1101-1134, 2015
1262015
Energy-enhanced atomic layer deposition for more process and precursor versatility
SE Potts, WMM Kessels
Coordination Chemistry Reviews 257 (23-24), 3254-3270, 2013
1232013
Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
HCM Knoops, EMJ Braeken, K de Peuter, SE Potts, S Haukka, V Pore, ...
ACS applied materials & interfaces 7 (35), 19857-19862, 2015
1152015
Enhanced doping efficiency of Al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor
Y Wu, SE Potts, PM Hermkens, HCM Knoops, F Roozeboom, ...
Chemistry of Materials 25 (22), 4619-4622, 2013
942013
Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide,[Al (CH3) 2 (μ-OiPr)] 2, as an alternative aluminum precursor
SE Potts, G Dingemans, C Lachaud, WMM Kessels
Journal of Vacuum Science & Technology A 30 (2), 2012
922012
Room‐Temperature ALD of Metal Oxide Thin Films by Energy‐Enhanced ALD
SE Potts, HB Profijt, R Roelofs, WMM Kessels
Chemical Vapor Deposition 19 (4‐6), 125-133, 2013
902013
Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition
Y Wu, PM Hermkens, BWH Van De Loo, HCM Knoops, SE Potts, ...
Journal of Applied Physics 114 (2), 2013
882013
Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO
D Garcia-Alonso, SE Potts, CAA van Helvoirt, MA Verheijen, ...
Journal of Materials Chemistry C 3 (13), 3095-3107, 2015
652015
Synthesis of zirconium guanidinate complexes and the formation of zirconium carbonitride via low pressure CVD
SE Potts, CJ Carmalt, CS Blackman, F Abou-Chahine, D Pugh, ...
Organometallics 28 (6), 1838-1844, 2009
422009
Synthesis of zirconium guanidinate complexes and the formation of zirconium carbonitride via low pressure CVD
SE Potts, CJ Carmalt, CS Blackman, F Abou-Chahine, D Pugh, ...
Organometallics 28 (6), 1838-1844, 2009
422009
Handbook of Crystal Growth
HCM Knoops, SE Potts, AA Bol, WMM Kessels
Elsevier 2, 1101-1134, 2015
412015
Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel
E Härkönen, SE Potts, WMM Kessels, B Díaz, A Seyeux, J Światowska, ...
Thin Solid Films 534, 384-393, 2013
352013
Tungsten imido complexes as precursors to tungsten carbonitride thin films
SE Potts, CJ Carmalt, CS Blackman, T Leese, HO Davies
Dalton Transactions, 5730-5736, 2008
252008
Bis (cyclopentadienyl) zirconium (IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD
SE Potts, CJ Carmalt, CS Blackman, F Abou-Chahine, N Leick, ...
Inorganica Chimica Acta 363 (6), 1077-1083, 2010
172010
Reactivity of ZrCl4 and HfCl4 with silylamines and thermal decomposition of the compounds [MCl4 {NH (R)(SiR′ 3)}](M= Zr, Hf, R= tBu, R′= Me; R= SiR′ 3= SiMe3, SiMe2H)
P Hasan, SE Potts, CJ Carmalt, RG Palgrave, HO Davies
Polyhedron 27 (3), 1041-1046, 2008
142008
Reactivity of ZrCl4 and HfCl4 with silylamines and thermal decomposition of the compounds [MCl4 {NH (R)(SiR′ 3)}](M= Zr, Hf, R= tBu, R′= Me; R= SiR′ 3= SiMe3, SiMe2H)
P Hasan, SE Potts, CJ Carmalt, RG Palgrave, HO Davies
Polyhedron 27 (3), 1041-1046, 2008
142008
Catalytic Combustion Reactions During Atomic Layer Deposition of Ru Studied Using 18O2 Isotope Labeling
N Leick, S Agarwal, AJM Mackus, SE Potts, WMM Kessels
The Journal of Physical Chemistry C 117 (41), 21320-21330, 2013
132013
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