| Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface A Chanana, S Mahapatra Journal of Applied Physics 119 (1), 014303, 2016 | 41 | 2016 |
| Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET A Sengupta, A Chanana, S Mahapatra AIP Advances 5 (2), 027101, 2015 | 35 | 2015 |
| First principles study of metal contacts to monolayer black phosphorous A Chanana, S Mahapatra Journal of Applied Physics 116 (20), 204302, 2014 | 34 | 2014 |
| Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide–semiconductor field effect transistor with Stone Wales defects A Chanana, A Sengupta, S Mahapatra Journal of Applied Physics 115 (3), 034501, 2014 | 26 | 2014 |
| Prediction of Coupled Electronic and Phononic Ferroelectricity in Strained 2D h-NbN: First-Principles Theoretical Analysis ACUV Waghmare PHYSICAL REVIEW LETTERS 123, 037601, 2019 | 24 | 2019 |
| Density functional theory based study of chlorine doped WS2-metal interface A Chanana, S Mahapatra Applied Physics Letters 108 (10), 103107, 2016 | 16 | 2016 |
| Theoretical Insights to Niobium-Doped Monolayer MoS 2–Gold Contact A Chanana, S Mahapatra IEEE Transactions on Electron Devices 62 (7), 2346-2351, 2015 | 13 | 2015 |
| Analysis of vacancy defects in hybrid graphene-boron nitride armchair nanoribbon based n-MOSFET at ballistic limit A Chanana, S Mahaptra, A Sengupta 2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015 | 2 | 2015 |
Santanu MahapatraProfessor, Indian Institute of Science, BangaloreVerified email at cedt.iisc.ernet.in
