| Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV JW Palmour, L Cheng, V Pala, EV Brunt, DJ Lichtenwalner, GY Wang, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 320 | 2014 |
| Growth and characterization of cubic boron nitride thin films DJ Kester, KS Ailey, DJ Lichtenwalner, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (6 …, 1994 | 183 | 1994 |
| Work function engineering using lanthanum oxide interfacial layers HN Alshareef, M Quevedo-Lopez, HC Wen, R Harris, P Kirsch, P Majhi, ... Applied physics letters 89 (23), 2006 | 133 | 2006 |
| New generation 10kV SiC power MOSFET and diodes for industrial applications JB Casady, V Pala, DJ Lichtenwalner, E Van Brunt, B Hull, GY Wang, ... Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 125 | 2015 |
| Flexible thin film temperature and strain sensor array utilizing a novel sensing concept DJ Lichtenwalner, AE Hydrick, AI Kingon Sensors and Actuators A: Physical 135 (2), 593-597, 2007 | 106 | 2007 |
| Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction DJ Lichtenwalner, JS Jur, AI Kingon, MP Agustin, Y Yang, S Stemmer, ... Journal of applied physics 98 (2), 2005 | 102 | 2005 |
| Comparison of Au and Au–Ni alloys as contact materials for MEMS switches Z Yang, DJ Lichtenwalner, AS Morris, J Krim, AI Kingon Journal of Microelectromechanical Systems 18 (2), 287-295, 2009 | 96 | 2009 |
| High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers DJ Lichtenwalner, L Cheng, S Dhar, A Agarwal, JW Palmour Applied Physics Letters 105 (18), 2014 | 87 | 2014 |
| Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ... IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017 | 83 | 2017 |
| Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC R Suri, CJ Kirkpatrick, DJ Lichtenwalner, V Misra Applied Physics Letters 96 (4), 2010 | 80 | 2010 |
| Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ... 2007 IEEE Symposium on VLSI Technology, 154-155, 2007 | 70 | 2007 |
| Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates R Suri, DJ Lichtenwalner, V Misra Applied Physics Letters 96 (11), 2010 | 67 | 2010 |
| Reliability studies of SiC vertical power MOSFETs DJ Lichtenwalner, B Hull, E Van Brunt, S Sabri, DA Gajewski, D Grider, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-6, 2018 | 64 | 2018 |
| SiC power device reliability DA Gajewski, B Hull, DJ Lichtenwalner, SH Ryu, E Bonelli, H Mustain, ... 2016 IEEE International Integrated Reliability Workshop (IIRW), 29-34, 2016 | 59 | 2016 |
| Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric H Alshareef, H Harris, H Wen, C Park, C Huffman, K Choi, H Luan, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 7-8, 2006 | 59 | 2006 |
| Reliability of SiC power devices against cosmic ray neutron single-event burnout DJ Lichtenwalner, A Akturk, J McGarrity, J Richmond, T Barbieri, B Hull, ... Materials Science Forum 924, 559-562, 2018 | 55 | 2018 |
| Contact degradation in hot/cold operation of direct contact micro-switches Z Yang, D Lichtenwalner, A Morris, J Krim, AI Kingon Journal of Micromechanics and Microengineering 20 (10), 105028, 2010 | 55 | 2010 |
| High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric DJ Lichtenwalner, V Misra, S Dhar, SH Ryu, A Agarwal Applied Physics Letters 95 (15), 2009 | 55 | 2009 |
| A new test facility for efficient evaluation of MEMS contact materials Z Yang, D Lichtenwalner, A Morris, S Menzel, C Nauenheim, ... Journal of Micromechanics and Microengineering 17 (9), 1788, 2007 | 48 | 2007 |
| Structure and chemistry of passivated SiC/SiO2 interfaces J Houston Dycus, W Xu, DJ Lichtenwalner, B Hull, JW Palmour, ... Applied Physics Letters 108 (20), 2016 | 45 | 2016 |
