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| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 179 | 2014 |
| Foundation of RF CMOS and SiGe BiCMOS technologies JS Dunn, DC Ahlgren, DD Coolbaugh, NB Feilchenfeld, G Freeman, ... IBM Journal of Research and Development 47 (2.3), 101-138, 2003 | 133 | 2003 |
| NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies G La Rosa, F Guarin, S Rauch, A Acovic, J Lukaitis, E Crabbe 1997 IEEE International Reliability Physics Symposium Proceedings. 35th …, 1997 | 125 | 1997 |
| SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications JS Rieh, B Jagannathan, DR Greenberg, M Meghelli, A Rylyakov, ... IEEE transactions on Microwave Theory and Techniques 52 (10), 2390-2408, 2004 | 122 | 2004 |
| Role of EE scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high V/sub GS/conditions SE Rauch, G La Rosa, FJ Guarin IEEE transactions on device and materials reliability 1 (2), 113-119, 2001 | 114 | 2001 |
| Hot carrier degradation in semiconductor devices T Grasser Springer, 2014 | 113 | 2014 |
| Ring oscillator design for MOSFET device reliability investigations and its use for in-line monitoring G La Rosa, F Guarin, K Kolvenbach, S Rauch III US Patent 6,476,632, 2002 | 110 | 2002 |
| Impact of EE scattering to the hot carrier degradation of deep submicron NMOSFETs SE Rauch, FJ Guarin, G LaRosa IEEE Electron Device Letters 19 (12), 463-465, 1998 | 107 | 1998 |
| The effects of fluorine on parametrics and reliability in a 0.18-/spl mu/m 3.5/6.8 nm dual gate oxide CMOS technology TB Hook, E Adler, F Guarin, J Lukaitis, N Rovedo, K Schruefer IEEE Transactions on Electron Devices 48 (7), 1346-1353, 2001 | 106 | 2001 |
| Approach to obtain high quality GaN on Si and SiC‐on‐silicon‐on‐insulator compliant substrate by molecular‐beam epitaxy Z Yang, F Guarin, IW Tao, WI Wang, SS Iyer Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 100 | 1995 |
| 32nm general purpose bulk CMOS technology for high performance applications at low voltage F Arnaud, J Liu, YM Lee, KY Lim, S Kohler, J Chen, BK Moon, CW Lai, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 84 | 2008 |
| A 0.13/spl mu/m CMOS platform with Cu/low-k interconnects for system on chip applications T Schiml, S Biesemans, G Brase, L Burrell, A Cowley, KC Chen, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 84 | 2001 |
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| Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs W Stillman, MS Shur, D Veksler, S Rumyantsev, F Guarin Electronics letters 43 (7), 422-423, 2007 | 77 | 2007 |
| A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs AK Sutton, BM Haugerud, APG Prakash, B Jun, JD Cressler, CJ Marshall, ... IEEE Transactions on Nuclear Science 52 (6), 2358-2365, 2005 | 62 | 2005 |
| 65nm CMOS technology for low power applications A Steegen, R Mo, R Mann, MC Sun, M Eller, G Leake, D Vietzke, A Tilke, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 64-67, 2005 | 61 | 2005 |
| Self-heating and its implications on hot carrier reliability evaluations S Mittl, F Guarín 2015 IEEE International Reliability Physics Symposium, 4A. 4.1-4A. 4.6, 2015 | 56 | 2015 |
| Method for forming a single crystal semiconductor on a substrate BA Ek, SMC Gates, FJ Guarin, SS Iyer, AR Powell US Patent 5,667,586, 1997 | 55 | 1997 |
| Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density JS Rieh, KM Watson, F Guarin, Z Yang, PC Wang, AJ Joseph, G Freeman, ... IEEE transactions on device and materials reliability 3 (2), 31-38, 2003 | 46 | 2003 |
Stewart RauchGlobalFoundries (retired)Verified email at ieee.org
