| A new design approach of dopingless tunnel FET for enhancement of device characteristics BR Raad, S Tirkey, D Sharma, P Kondekar IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017 | 121 | 2017 |
| Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016 | 107 | 2016 |
| Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement BR Raad, K Nigam, D Sharma, PN Kondekar Superlattices and Microstructures 94, 138-146, 2016 | 89 | 2016 |
| Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement B Raad, K Nigam, D Sharma, P Kondekar Electronics Letters 52 (9), 770-772, 2016 | 84 | 2016 |
| Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization DS Yadav, D Sharma, BR Raad, V Bajaj Superlattices and Microstructures 96, 36-46, 2016 | 51 | 2016 |
| A novel approach to improve the performance of charge plasma tunnel field-effect transistor S Tirkey, D Sharma, BR Raad, DS Yadav IEEE Transactions on electron devices 65 (1), 282-289, 2017 | 31 | 2017 |
| A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism K Nigam, P Kondekar, D Sharma, BR Raad Superlattices and Microstructures 98, 1-7, 2016 | 27 | 2016 |
| Dual workfunction hetero gate dielectric tunnel field-effect transistor performance analysis DS Yadav, D Sharma, BR Raad, V Bajaj 2016 International Conference on Advanced Communication Control and …, 2016 | 25 | 2016 |
| A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature DS Yadav, BR Raad, D Sharma Superlattices and Microstructures 100, 266-273, 2016 | 24 | 2016 |
| Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance DS Yadav, A Verma, D Sharma, S Tirkey, BR Raad Superlattices and Microstructures 111, 123-133, 2017 | 20 | 2017 |
| Physics‐based simulation study of high‐performance gallium arsenide phosphide–indium gallium arsenide tunnel field‐effect transistor BR Raad, D Sharma, K Nigam, P Kondekar Micro & Nano Letters 11 (7), 366-368, 2016 | 20 | 2016 |
| Performance investigation of hetero material (InAs/Si)‐based charge plasma TFET DS Yadav, D Sharma, A Kumar, D Rathor, R Agrawal, S Tirkey, BR Raad, ... Micro & Nano Letters 12 (6), 358-363, 2017 | 17 | 2017 |
| Temperature based performance analysis of doping-less tunnel field effect transistor DS Yadav, D Sharma, R Agrawal, G Prajapati, S Tirkey, BR Raad, V Bajaj 2017 International Conference on Information, Communication, Instrumentation …, 2017 | 15 | 2017 |
| Junction‐less charge plasma TFET with dual drain work functionality for suppressing ambipolar nature and improving radio‐frequency performance S Tirkey, BR Raad, A Gedam, D Sharma Micro & Nano Letters 13 (1), 18-23, 2018 | 12 | 2018 |
| DC and analog/RF performance optimisation of source pocket dual work function TFET BR Raad, D Sharma, P Kondekar, K Nigam, S Baronia International Journal of Electronics 104 (12), 1992-2006, 2017 | 12 | 2017 |
| Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance S Tirkey, D Sharma, BR Raad, DS Yadav Journal of Computational Electronics 16 (3), 714-720, 2017 | 12 | 2017 |
| Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors BR Raad, D Sharma, K Nigam, P Kondekar Journal of Computational Electronics 16, 24-29, 2017 | 11 | 2017 |
| Source engineered tunnel FET for enhanced device electrostatics with trap charges reliability BR Raad, D Sharma, S Tirkey Microelectronic Engineering 194, 79-84, 2018 | 9 | 2018 |
| Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation M Aslam, D Sharma, D Soni, S Yadav, BR Raad, DS Yadav, N Sharma Micro & Nano Letters 13 (10), 1480-1485, 2018 | 8 | 2018 |
| Dual workfunction tunnel field-effect transistor with shifted gate for ambipolar suppression and ON current improvement BR Raad, D Sharma, P Kondekar 2016 International Conference on Computational Techniques in Information and …, 2016 | 4 | 2016 |
Dr Dheeraj sharmaIndian Institute of Information Technology Design & Manufacturing JabalpurVerified email at iiitdmj.ac.in
