| Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena Applied physics letters 99 (19), 2011 | 181 | 2011 |
| Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ... physica status solidi (a) 208 (7), 1511-1516, 2011 | 117 | 2011 |
| Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ... IEEE electron device letters 34 (7), 852-854, 2013 | 78 | 2013 |
| Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors S Ganguly, A Konar, Z Hu, H Xing, D Jena Applied Physics Letters 101 (25), 2012 | 71 | 2012 |
| Strained GaN quantum-well FETs on single crystal bulk AlN substrates M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ... Applied Physics Letters 110 (6), 2017 | 64 | 2017 |
| Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ... Applied physics letters 104 (19), 2014 | 64 | 2014 |
| Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing Applied Physics Express 7 (3), 031002, 2014 | 33 | 2014 |
| Optical fault isolation and nanoprobing techniques for the 10 nm technology node and beyond M von Haartman, S Rahman, S Ganguly, J Verma, A Umair, T Deborde ISTFA 2015, 52-56, 2015 | 28 | 2015 |
| Improved X-band performance and reliability of a GaN HEMT with sunken source connected field plate design KM Bothe, S Ganguly, J Guo, Y Liu, A Niyonzima, O Tornblad, J Fisher, ... IEEE Electron Device Letters 43 (3), 354-357, 2022 | 24 | 2022 |
| Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment S Ganguly, J Verma, Z Hu, HG Xing, D Jena Applied Physics Express 7 (3), 034102, 2014 | 21 | 2014 |
| AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz S Ganguly, B Song, WS Hwang, Z Hu, M Zhu, J Verma, H Xing, D Jena physica status solidi (c) 11 (3‐4), 887-889, 2014 | 21 | 2014 |
| Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies DA Gajewski, S Ganguly, S Sheppard, S Wood, JB Barner, J Milligan, ... Microelectronics Reliability 84, 1-6, 2018 | 19 | 2018 |
| Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes M Qi, G Li, V Protasenko, P Zhao, J Verma, B Song, S Ganguly, M Zhu, ... Applied Physics Letters 106 (4), 2015 | 19 | 2015 |
| Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts S Ganguly, J Verma, HG Xing, D Jena Applied Physics Express 7 (10), 105501, 2014 | 18 | 2014 |
| Gate oxide reliability of SiC MOSFETs and capacitors fabricated on 150mm wafers DJ Lichtenwalner, S Sabri, E Van Brunt, B Hull, S Ganguly, DA Gajewski, ... Materials Science Forum 963, 745-748, 2019 | 17 | 2019 |
| Application of on-line Focused Beam Reflectance Measurement Technology in high shear wet granulation S Ganguly, JZ Gao The AAPS Journal 7, 2005 | 12 | 2005 |
| A high efficiency, Ka-band, GaN-on-SiC MMIC with low compression B Schmukler, KM Bothe, S Ganguly, T Alcorn, J Gao, C Hardiman, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 11 | 2019 |
| Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation R Wang, G Li, J Guo, B Song, J Verma, Z Hu, Y Yue, K Nomoto, S Ganguly, S ... Electron Devices Meeting (IEDM), 2013 IEEE International, 28.6.1-28.6.4, 2013 | 11* | 2013 |
| Accelerated testing of SiC power devices DJ Lichtenwalner, S Sabri, E van Brunt, B Hull, SH Ryu, P Steinmann, ... 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2020 | 10 | 2020 |
| Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Z Hu, R Jana, M Qi, S Ganguly, B Song, E Kohn, D Jena, HG Xing 72nd Device Research Conference, 27-28, 2014 | 10 | 2014 |
