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SANDIP MONDAL
SANDIP MONDAL
IIT Bombay | Purdue University | Western Digital | IISc
Verified email at ee.iitb.ac.in - Homepage
Title
Cited by
Cited by
Year
Reconfigurable perovskite nickelate electronics for artificial intelligence
HT Zhang, TJ Park, ANMN Islam, DSJ Tran, S Manna, Q Wang, S Mondal, ...
Science 375 (6580), 533-539, 2022
1132022
All Inorganic Spin-coated Nanoparticle Based Capacitive Memory Devices
S Mondal, V Venkataraman
IEEE Electron Device Letters 37 (4), 396-399, 2016
632016
Low temperature below 200° C solution processed tunable flash memory device without tunneling and blocking layer
S Mondal, V Venkataraman
Nature Communications 10 (1), 2143, 2019
592019
All inorganic solution processed three terminal charge trapping memory device
S Mondal, V Venkataraman
Applied Physics Letters 114 (17), 2019
582019
Tunable electron affinity with electronic band alignment of solution processed dielectric
S Mondal, V Venkataraman
Applied Physics Letters 111 (4), 2017
562017
Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification
S Mondal
Semiconductor Science and Technology 35 (10), 10LT02, 2020
472020
Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics
A Kumar, S Mondal, KSRK Rao
Applied Surface Science 370, 373-379, 2016
462016
High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures
A Kumar, S Mondal, SG Kumar, KSRK Rao
Materials Science in Semiconductor Processing 40, 77-83, 2016
422016
Gate-controllable electronic trap detection in dielectrics
S Mondal, T Paul, A Ghosh, V Venkataraman
IEEE Electron Device Letters 41 (5), 717-720, 2020
382020
Tunable electronic trap energy in sol-gel processed dielectrics
S Mondal, A Kumar
IEEE Transactions on Electron Devices 68 (3), 1190-1195, 2021
362021
Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics
S Mondal, A Kumar
Superlattices and Microstructures 100, 876-885, 2016
282016
Critical investigation of high performance spin-coated high-κ titania thin films based MOS capacitor
A Kumar, S Mondal, KSRK Rao
Journal of Materials Science: Materials in Electronics, 1-7, 2016
272016
Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices
A Kumar, S Mondal, KSRK Rao
Applied Physics A 122, 1-8, 2016
222016
All‐electric nonassociative learning in nickel oxide
S Mondal, Z Zhang, ANMN Islam, R Andrawis, S Gamage, NA Aghamiri, ...
Advanced Intelligent Systems 4 (10), 2200069, 2022
212022
Neuromorphic learning with Mott insulator NiO
Z Zhang, S Mondal, S Mandal, JM Allred, NA Aghamiri, A Fali, Z Zhang, ...
Proceedings of the National Academy of Sciences 118 (39), e2017239118, 2021
192021
Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy
A Kumar, S Mondal, KSR Koteswara Rao
Applied Physics Letters 110 (13), 2017
192017
DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating
A Kumar, S Mondal, KSR Rao
AIP Advances 5 (11), 2015
192015
Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications
A Kumar, S Mondal, KSR Koteswara Rao
Journal of Applied Physics 121 (8), 2017
152017
Quantum dots: an overview of synthesis, properties, and applications
K Agarwal, H Rai, S Mondal
Materials Research Express, 2023
102023
Switching dynamics in vanadium dioxide-based stochastic thermal neurons
H Yu, ANMN Islam, S Mondal, A Sengupta, S Ramanathan
IEEE Transactions on Electron Devices 69 (6), 3135-3141, 2022
62022
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