Jong-In Shim
Jong-In Shim
Dept. of Electronics and Communication Eng., Hanyang University ERICA Campus
Verified email at - Homepage
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Rate equation analysis of efficiency droop in InGaN light-emitting diodes
HY Ryu, HS Kim, JI Shim
Applied Physics Letters 95 (8), 2009
Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes
HY Ryu, IG Choi, HS Choi, JI Shim
Applied Physics Express 6 (6), 062101, 2013
Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
JT Oh, SY Lee, YT Moon, JH Moon, S Park, KY Hong, KY Song, C Oh, ...
Optics express 26 (9), 11194-11200, 2018
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
HY Ryu, DS Shin, JI Shim
Applied Physics Letters 100 (13), 2012
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
DS Shin, DP Han, JY Oh, JI Shim
Applied Physics Letters 100 (15), 2012
Effect of current spreading on the efficiency droop of InGaN light-emitting diodes
HY Ryu, JI Shim
Optics Express 19 (4), 2886-2894, 2011
Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
J Yun, JI Shim, H Hirayama
Applied Physics Express 8 (2), 022104, 2015
Lasing characteristics of 1.5 mu m GaInAsP-InP SCH-BIG-DR lasers
JI Shim, K Komori, S Arai, I Arima, Y Suematsu, R Somchai
IEEE journal of quantum electronics 27 (6), 1736-1745, 1991
Efficiency droop in AlGaInP and GaInN light-emitting diodes
JI Shim, DP Han, H Kim, DS Shin, GB Lin, DS Meyaard, Q Shan, J Cho, ...
Applied Physics Letters 100 (11), 2012
A method for current spreading analysis and electrode pattern design in light-emitting diodes
S Hwang, J Shim
IEEE Transactions on Electron Devices 55 (5), 1123-1128, 2008
An explanation of efficiency droop in InGaN-based light emitting diodes: Saturated radiative recombination rate at randomly distributed In-rich active areas
JI Shim, H Kim, DS Shin, HY Yoo
Journal of the Korean Physical Society 58 (3), 503-508, 2011
Measuring the internal quantum efficiency of light-emitting diodes: Towards accurate and reliable room-temperature characterization
JI Shim, DS Shin
Nanophotonics 7 (10), 1601-1615, 2018
Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
DP Han, DG Zheng, CH Oh, H Kim, JI Shim, DS Shin, KS Kim
Applied Physics Letters 104 (15), 2014
Reduction of effective linewidth enhancement factor alpha/sub eff/of DFB lasers with complex coupling coefficients
K Kudo, JI Shim, K Komori, S Arai
IEEE photonics technology letters 4 (6), 531-534, 1992
Analog characterization of low-voltage MQW traveling-wave electroabsorption modulators
B Liu, J Shim, YJ Chiu, A Keating, J Piprek, JE Bowers
Journal of Lightwave Technology 21 (12), 3011, 2003
Refractive index and loss changes produced by current injection in InGaAs (P)-InGaAsP multiple quantum-well (MQW) waveguides
JI Shim, M Yamaguchi, P Delansay, M Kitamura
IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 408-415, 1995
Conduction mechanisms of leakage currents in InGaN/GaN-based light-emitting diodes
DP Han, CH Oh, H Kim, JI Shim, KS Kim, DS Shin
IEEE Transactions on Electron Devices 62 (2), 587-592, 2014
High-performance blue InGaN laser diodes with single-quantum-well active layers
HY Ryu, KH Ha, SN Lee, T Jang, JK Son, HS Paek, YJ Sung, HK Kim, ...
IEEE Photonics technology letters 19 (21), 1717-1719, 2007
Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
HY Ryu, KH Ha, JH Chae, KS Kim, JK Son, OH Nam, YJ Park, JI Shim
Applied physics letters 89 (17), 2006
Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes
KS Kim, DP Han, HS Kim, JI Shim
Applied Physics Letters 104 (9), 2014
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