| Laser induced phase transformation influenced by Co doping in TiO2 nanoparticles LK Gaur, P Kumar, D Kushavah, KR Khiangte, MC Mathpal, V Agrahari, ... Journal of Alloys and Compounds 780, 25-34, 2019 | 42 | 2019 |
| Dislocation density and strain-relaxation in Ge1− xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy KR Khiangte, JS Rathore, V Sharma, S Bhunia, S Das, RS Fandan, ... Journal of Crystal Growth 470, 135-142, 2017 | 21 | 2017 |
| Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures KR Khiangte, JS Rathore, S Das, RS Pokharia, J Schmidt, HJ Osten, ... Journal of Applied Physics 124 (6), 2018 | 16 | 2018 |
| Engineering strain relaxation of GeSn epilayers on Ge/Si (001) substrates KR Khiangte, JS Rathore, V Sharma, A Laha, S Mahapatra Solid State Communications 284, 88-92, 2018 | 12 | 2018 |
| Self-assembled Sn nanocrystals as the floating gate of nonvolatile flash memory JS Rathore, R Fandan, S Srivastava, KR Khiangte, S Das, U Ganguly, ... ACS Applied Electronic Materials 1 (9), 1852-1858, 2019 | 10 | 2019 |
| Decomposition resilience of GaN nanowires, crested and surficially passivated by AlN S Bhunia, R Sarkar, D Nag, K Ghosh, KR Khiangte, S Mahapatra, A Laha Crystal Growth & Design 20 (8), 4867-4874, 2020 | 8 | 2020 |
| Wafer-scale all-epitaxial GeSn-on-insulator on Si (1 1 1) by molecular beam epitaxy KR Khiangte, JS Rathore, J Schmidt, HJ Osten, A Laha, S Mahapatra Journal of Physics D: Applied Physics 51 (32), 32LT01, 2018 | 7 | 2018 |
| Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE) E Wangila, SK Saha, R Kumar, A Kuchuk, C Gunder, S Amoah, ... CrystEngComm 24 (24), 4372-4380, 2022 | 6 | 2022 |
| Epitaxial Ge-Gd2O3 on Si (111) substrate by sputtering for germanium-on-insulator applications A Rawat, KK Roluahpuia, P Gribisch, HJ Osten, A Laha, S Mahapatra, ... Thin Solid Films 731, 138732, 2021 | 6 | 2021 |
| Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy S Dev, KR Khiangte, S Lodha Journal of Physics D: Applied Physics 53 (21), 21LT01, 2020 | 6 | 2020 |
| Triaxially uniform high-quality AlxGa (1− x) N (x∼ 50%) nanowires on template free sapphire substrate R Sarkar, K Ghosh, S Bhunia, D Nag, KR Khiangte, A Laha Nanotechnology 30 (6), 065603, 2018 | 6 | 2018 |
| On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy S Das, KR Khiangte, RS Fandan, JS Rathore, RS Pokharia, S Mahapatra, ... Current Applied Physics 17 (3), 327-332, 2017 | 6 | 2017 |
| Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic A Rawat, KK Roluahpuia, S Rowtu, V Belwanshi, A Laha, S Mahapatra, ... Thin Solid Films 742, 139047, 2022 | 5 | 2022 |
| Epitaxial Gd 2O 3 on Si (111) Substrate by Sputtering to Enable Low Cost SOI R Amita, KR Khiangte, A Laha, S Mahapatra, U Gangway 2018 76th Device Research Conference (DRC), 1-2, 2018 | 5 | 2018 |
| Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application K Ghosh, S Das, KR Khiangte, N Choudhury, A Laha Journal of Physics D: Applied Physics 50 (47), 475102, 2017 | 5 | 2017 |
| Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si (111), grown by molecular beam epitaxy RS Pokharia, KR Khiangte, JS Rathore, J Schmidt, HJ Osten, A Laha, ... Optical Components and Materials XVI 10914, 220-226, 2019 | 2 | 2019 |
| Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si (111) substrates by plasma assisted molecular beam … R Sarkar, R Fandan, KR Khiangte, S Chouksey, AM Josheph, S Das, ... arXiv preprint arXiv:1603.08603, 2016 | 2 | 2016 |
| Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence R Kumar, SK Saha, A Kuchuk, F Maia de Oliveira, KR Khiangte, SQ Yu, ... Crystal Growth & Design 23 (10), 7385-7393, 2023 | 1 | 2023 |
| Epitaxial growth of Ge1-xSnx on c–Plane sapphire substrate by molecular beam epitaxy D Gayakwad, D Singh, R Kumar, YI Mazur, SQ Yu, GJ Salamo, ... Journal of Crystal Growth 618, 127306, 2023 | 1 | 2023 |
| Method of fabricating non-volatile memory device L Apurba, M Suddhasatta, F Rajveer S, K Krista R, S Das IN Patent 502,049, 2024 | | 2024 |
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
