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Lili Huo
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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
R Lingaparthi, N Dharmarasu, K Radhakrishnan, A Ranjan, TLA Seah, ...
Applied Physics Letters 118 (12), 2021
112021
On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes
S García-Sánchez, M Abou Daher, M Lesecq, L Huo, R Lingaparthi, ...
IEEE Transactions on Electron Devices 70 (7), 3447-3453, 2023
32023
Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
J Mateos, S García-Sánchez, M Abou Daher, M Lesecq, L Huo, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel
L Huo, R Lingaparthi, K Shabdurasulov, N Dharmarasu, K Radhakrishnan, ...
2023 18th European Microwave Integrated Circuits Conference (EuMIC), 289-292, 2023
2023
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole …
R Lingaparthi, N Dharmarasu, K Radhakrishnan, L Huo
Applied Physics Letters 123 (9), 2023
2023
Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
L Huo, R Lingaparthi, N Dharmarasu, K Radhakrishnan, C Chan
Journal of Physics D: Applied Physics 56 (34), 345302, 2023
2023
Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding
A Ranjan, R Lingaparthi, L Huo, C Chan, N Dharmarasu, ...
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), 443-446, 2022
2022
Development of Hall Effect Sensor on AlGaN/GaN FinFET Structure
L Huo, YC Liang, X Gong
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019
Growth Instability of N-Polar Gan on Vicinal Sic Substrate Using Plasma-Assisted Molecular Beam Epitaxy
L Huo, R Lingaparthi, N Dharmarasu, K Radhakrishnan
Available at SSRN 4862545, 0
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