| Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ... MRS Proc 33 (2), 81-87, 2014 | 34 | 2014 |
| Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance … SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ... AIP Advances 5 (4), 047136, 2015 | 25 | 2015 |
| Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ... IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018 | 19 | 2018 |
| Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaNheterostructures on sapphire with ultra-thin buffer DB Mihir Kumar Mahata, SaptarsiGhosh, Sanjay Kumar Jana, ApurbaChakraborty ... AIP Advances 4, 2014 | 15 | 2014 |
| Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ... Applied Physics Letters 105 (7), 073502, 2014 | 12 | 2014 |
| Temperature-dependent short-channel parameters of FinFETs RR Das, S Maity, A Choudhury, A Chakraborty, CT Bhunia, PP Sahu Journal of Computational Electronics 17 (3), 1001-1012, 2018 | 11 | 2018 |
| Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN by frequency dependent conductance measurement A Chakraborty, D Biswas Applied Physics Letter 106, 082112, 2015 | 11* | 2015 |
| A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0) P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ... Journal of Crystal Growth 418, 138-144, 2015 | 10 | 2015 |
| Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness R Kumar, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ... Applied Surface Science 324, 304-309, 2015 | 8 | 2015 |
| RF/Analog performance of GaAs Multi-Fin FinFET with stress effect RR Das, S Maity, A Chowdhury, A Chakraborty Microelectronics Journal 117, 105267, 2021 | 7 | 2021 |
| Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ... Electronic Materials Letters 12 (2), 232-236, 2016 | 7 | 2016 |
| Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening A Bag, R Kumar, P Mukhopadhyay, MK Mahata, A Chakraborty, S Ghosh, ... Electronic Materials Letters 11 (4), 707-716, 2015 | 7 | 2015 |
| Impact of stress effect on triple material gate step-FinFET with DC and AC analysis RR Das, A Chowdhury, A Chakraborty, S Maity Microsystem Technologies 26 (6), 1813-1821, 2020 | 6 | 2020 |
| Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis A Chakraborty, S Ghosh, P Mukhopadhyay, S Das, A Bag, D Biswas Superlattices and Microstructures 113, 147-152, 2018 | 6 | 2018 |
| Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode S Das, S Majumdar, R Kumar, A Chakraborty, A Bag, D Biswas AIP Conference Proceedings 1675 (1), 020014, 2015 | 6 | 2015 |
| Drive current boosting and low sub-threshold swing obtained by δP+layer in double-gate tunnel FET AA Chakraborty, PN Kondekar, MK Yadav 2012 International Conference on Enabling Science and Nanotechnology, 1-2, 2012 | 6 | 2012 |
| Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique A Chakraborty, A Bag, P Mukhopadhyay, S Ghosh, D Biswas Semiconductor Science and Technology 33 (3), 035009, 2018 | 4 | 2018 |
| Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on sapphire (0001) A Bag, P Mukhopadhyay, S Ghosh, R Kumar, SM Dinara, S Kabi, ... Proceedings of the 2014 IEEE Students' Technology Symposium, 393-395, 2014 | 2 | 2014 |
| Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current A Bag, P Das, S Ghosh, P Mukhopadhyay, SM Dinara, R Kumar, ... IETE Technical Review 33 (1), 7-10, 2016 | 1 | 2016 |
| Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect RR Das, S Maity, A Chowdhury, A Chakraborty IETE Journal of Research, 1-9, 2022 | | 2022 |
Dhrubes BiswasProfessor of Electronics, Indian Institute of Technology, KharagpurVerified email at ece.iitkgp.ernet.in
