Apurba Chakraborty
Apurba Chakraborty
Birla Institute of Technology and Science Pilani-Goa
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Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement
A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ...
MRS Proc 33 (2), 81-87, 2014
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance …
SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ...
AIP Advances 5 (4), 047136, 2015
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ...
IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaNheterostructures on sapphire with ultra-thin buffer
DB Mihir Kumar Mahata, SaptarsiGhosh, Sanjay Kumar Jana, ApurbaChakraborty ...
AIP Advances 4, 2014
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ...
Applied Physics Letters 105 (7), 073502, 2014
Temperature-dependent short-channel parameters of FinFETs
RR Das, S Maity, A Choudhury, A Chakraborty, CT Bhunia, PP Sahu
Journal of Computational Electronics 17 (3), 1001-1012, 2018
Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN by frequency dependent conductance measurement
A Chakraborty, D Biswas
Applied Physics Letter 106, 082112, 2015
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0)
P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ...
Journal of Crystal Growth 418, 138-144, 2015
Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness
R Kumar, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ...
Applied Surface Science 324, 304-309, 2015
RF/Analog performance of GaAs Multi-Fin FinFET with stress effect
RR Das, S Maity, A Chowdhury, A Chakraborty
Microelectronics Journal 117, 105267, 2021
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ...
Electronic Materials Letters 12 (2), 232-236, 2016
Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening
A Bag, R Kumar, P Mukhopadhyay, MK Mahata, A Chakraborty, S Ghosh, ...
Electronic Materials Letters 11 (4), 707-716, 2015
Impact of stress effect on triple material gate step-FinFET with DC and AC analysis
RR Das, A Chowdhury, A Chakraborty, S Maity
Microsystem Technologies 26 (6), 1813-1821, 2020
Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
A Chakraborty, S Ghosh, P Mukhopadhyay, S Das, A Bag, D Biswas
Superlattices and Microstructures 113, 147-152, 2018
Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode
S Das, S Majumdar, R Kumar, A Chakraborty, A Bag, D Biswas
AIP Conference Proceedings 1675 (1), 020014, 2015
Drive current boosting and low sub-threshold swing obtained by δP+layer in double-gate tunnel FET
AA Chakraborty, PN Kondekar, MK Yadav
2012 International Conference on Enabling Science and Nanotechnology, 1-2, 2012
Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique
A Chakraborty, A Bag, P Mukhopadhyay, S Ghosh, D Biswas
Semiconductor Science and Technology 33 (3), 035009, 2018
Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on sapphire (0001)
A Bag, P Mukhopadhyay, S Ghosh, R Kumar, SM Dinara, S Kabi, ...
Proceedings of the 2014 IEEE Students' Technology Symposium, 393-395, 2014
Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current
A Bag, P Das, S Ghosh, P Mukhopadhyay, SM Dinara, R Kumar, ...
IETE Technical Review 33 (1), 7-10, 2016
Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect
RR Das, S Maity, A Chowdhury, A Chakraborty
IETE Journal of Research, 1-9, 2022
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