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Apurba Chakraborty
Apurba Chakraborty
Birla Institute of Technology and Science Pilani-Goa
Verified email at goa.bits-pilani.ac.in - Homepage
Title
Cited by
Cited by
Year
Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement
A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ...
MRS Proc 33 (2), 81-87, 2014
342014
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance …
SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ...
AIP Advances 5 (4), 047136, 2015
252015
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ...
IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018
192018
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaNheterostructures on sapphire with ultra-thin buffer
DB Mihir Kumar Mahata, SaptarsiGhosh, Sanjay Kumar Jana, ApurbaChakraborty ...
AIP Advances 4, 2014
152014
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ...
Applied Physics Letters 105 (7), 073502, 2014
122014
Temperature-dependent short-channel parameters of FinFETs
RR Das, S Maity, A Choudhury, A Chakraborty, CT Bhunia, PP Sahu
Journal of Computational Electronics 17 (3), 1001-1012, 2018
112018
Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN by frequency dependent conductance measurement
A Chakraborty, D Biswas
Applied Physics Letter 106, 082112, 2015
11*2015
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0)
P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ...
Journal of Crystal Growth 418, 138-144, 2015
102015
Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness
R Kumar, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ...
Applied Surface Science 324, 304-309, 2015
82015
RF/Analog performance of GaAs Multi-Fin FinFET with stress effect
RR Das, S Maity, A Chowdhury, A Chakraborty
Microelectronics Journal 117, 105267, 2021
72021
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ...
Electronic Materials Letters 12 (2), 232-236, 2016
72016
Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening
A Bag, R Kumar, P Mukhopadhyay, MK Mahata, A Chakraborty, S Ghosh, ...
Electronic Materials Letters 11 (4), 707-716, 2015
72015
Impact of stress effect on triple material gate step-FinFET with DC and AC analysis
RR Das, A Chowdhury, A Chakraborty, S Maity
Microsystem Technologies 26 (6), 1813-1821, 2020
62020
Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
A Chakraborty, S Ghosh, P Mukhopadhyay, S Das, A Bag, D Biswas
Superlattices and Microstructures 113, 147-152, 2018
62018
Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode
S Das, S Majumdar, R Kumar, A Chakraborty, A Bag, D Biswas
AIP Conference Proceedings 1675 (1), 020014, 2015
62015
Drive current boosting and low sub-threshold swing obtained by δP+layer in double-gate tunnel FET
AA Chakraborty, PN Kondekar, MK Yadav
2012 International Conference on Enabling Science and Nanotechnology, 1-2, 2012
62012
Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique
A Chakraborty, A Bag, P Mukhopadhyay, S Ghosh, D Biswas
Semiconductor Science and Technology 33 (3), 035009, 2018
42018
Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on sapphire (0001)
A Bag, P Mukhopadhyay, S Ghosh, R Kumar, SM Dinara, S Kabi, ...
Proceedings of the 2014 IEEE Students' Technology Symposium, 393-395, 2014
22014
Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current
A Bag, P Das, S Ghosh, P Mukhopadhyay, SM Dinara, R Kumar, ...
IETE Technical Review 33 (1), 7-10, 2016
12016
Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect
RR Das, S Maity, A Chowdhury, A Chakraborty
IETE Journal of Research, 1-9, 2022
2022
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