Hwichan Jun
Hwichan Jun
Senior Engineer, Samsung Electronics
Verified email at postech.ac.kr
Title
Cited by
Cited by
Year
Phosphate Doping into Monoclinic BiVO4 for Enhanced Photoelectrochemical Water Oxidation Activity
WJ Jo, JW Jang, K Kong, HJ Kang, JY Kim, H Jun, KPS Parmar, JS Lee
Angewandte Chemie 124 (13), 3201-3205, 2012
3912012
Fabrication of CaFe2O4/TaON Heterojunction Photoanode for Photoelectrochemical Water Oxidation
ES Kim, N Nishimura, G Magesh, JY Kim, JW Jang, H Jun, J Kubota, ...
Journal of the american chemical society 135 (14), 5375-5383, 2013
2272013
Size effects of WO3 nanocrystals for photooxidation of water in particulate suspension and photoelectrochemical film systems
SJ Hong, H Jun, PH Borse, JS Lee
International Journal of Hydrogen Energy 34 (8), 3234-3242, 2009
2242009
Photocatalytic hydrogen production from natural seawater
SM Ji, H Jun, JS Jang, HC Son, PH Borse, JS Lee
Journal of Photochemistry and Photobiology A: Chemistry 189 (1), 141-144, 2007
842007
Photoelectrochemical water splitting over ordered honeycomb hematite electrodes stabilized by alumina shielding
H Jun, B Im, JY Kim, YO Im, JW Jang, ES Kim, JY Kim, HJ Kang, SJ Hong, ...
Energy & Environmental Science 5 (4), 6375-6382, 2012
782012
Charge transfer in iron oxide photoanode modified with carbon nanotubes for photoelectrochemical water oxidation: an electrochemical impedance study
JY Kim, H Jun, SJ Hong, HG Kim, JS Lee
International journal of hydrogen energy 36 (16), 9462-9468, 2011
562011
Phase and photoelectrochemical behavior of solution-processed nanocrystals for oxidation of water under solar light
PH Borse, H Jun, SH Choi, SJ Hong, JS Lee
Applied Physics Letters 93 (17), 173103, 2008
482008
The fabrication of highly uniform ZnO/CdS core/shell structures using a spin-coating-based successive ion layer adsorption and reaction method
J Joo, D Kim, DJ Yun, H Jun, SW Rhee, JS Lee, K Yong, S Kim, S Jeon
Nanotechnology 21 (32), 325604, 2010
452010
Nanocrystalline WO3 film with high photo-electrochemical activity prepared by polymer-assisted direct deposition
SJ Hong, H Jun, JS Lee
Scripta Materialia 63 (7), 757-760, 2010
352010
Fabrication of a vertically aligned ferroelectric perovskite nanowire array on conducting substrate
B Im, H Jun, KH Lee, SH Lee, IK Yang, YH Jeong, JS Lee
Chemistry of Materials 22 (16), 4806-4813, 2010
352010
Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications
D Ha, C Yang, J Lee, S Lee, SH Lee, KI Seo, HS Oh, EC Hwang, SW Do, ...
2017 Symposium on VLSI Technology, T68-T69, 2017
332017
Methods for fabricating semiconductor devices
JUN Hwi-Chan, H Shin, J Jae-Ran
US Patent 9,812,552, 2017
202017
Method of fabricating semiconductor device having a resistor structure
HS Song, JUN Hwi-Chan
US Patent 9,406,770, 2016
182016
Semiconductor device
H Shin, BAE Deok-Han, DH Weon, JUN Hwi-Chan
US Patent App. 14/629,249, 2016
122016
Fabrication of nanoporous MTiO 3 (M= Pb, Ba, Sr) perovskite array films with unprecedented high structural regularity
B Im, H Jun, KH Lee, JS Lee
CrystEngComm 13 (24), 7212-7215, 2011
102011
Semiconductor device with field effect transistors and method of fabricating the same
C Hyoseok, H Jun, Y Kim, C Kim, H Park, DY Lee
US Patent 10,199,471, 2019
72019
Inducible gene
D Hirst, T Robson, J Worthington
US Patent App. 10/177,093, 2003
72003
Method for fabricating semiconductor device having a silicide layer
BAE Deok-Han, KS Kim, CS Kim, WC Shin, JUN Hwi-Chan
US Patent 9,876,094, 2018
62018
Method for manufacturing semiconductor device using gate portion as etch mask
JUN Hwi-Chan, BAE Deok-Han, HS Song, HA Seung-Seok
US Patent 9,679,991, 2017
62017
Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures
JUN Hwi-Chan, DH Weon, H Shin, YS Lee
US Patent 9,589,899, 2017
62017
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Articles 1–20